Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Peter Gregory, Deputy Editors: Martin Ottmar, Carolina Novo da Silva, Lorna Stimson
Online ISSN: 1521-4095
Associated Title(s): Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials Interfaces, Advanced Optical Materials, Particle & Particle Systems Characterization, Small
Cover Picture: Direction-Dependent Homoepitaxial Growth of GaN Nanowires (Adv. Mater. 2/2006)
GaN nanowires with vastly different morphologies depending upon their growth direction can be produced by direct nitridation and vapor transport of Ga in disassociated ammonia, report Sunkara and co-workers on p. 216. Nanowires grown along the c-direction develop hexagonal-prism island morphologies, while wires grown along the a-direction form uniform, belt-shaped morphologies. A “ballistic” phenomenon involving the 1D transport of adatoms on the non-polar surfaces of <0001> GaN nanowires is proposed to explain the prismatic island morphologies.