Advanced Materials

Cover image for Vol. 28 Issue 45

18_02/2006Cover Picture: Direction-Dependent Homoepitaxial Growth of GaN Nanowires (Adv. Mater. 2/2006)

GaN nanowires with vastly different morphologies depending upon their growth direction can be produced by direct nitridation and vapor transport of Ga in disassociated ammonia, report Sunkara and co-workers on p. 216. Nanowires grown along the c-direction develop hexagonal-prism island morphologies, while wires grown along the a-direction form uniform, belt-shaped morphologies. A “ballistic” phenomenon involving the 1D transport of adatoms on the non-polar surfaces of <0001> GaN nanowires is proposed to explain the prismatic island morphologies.

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