Advanced Materials

Cover image for Vol. 28 Issue 40

18_12b/2006Inside Front Cover: Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single-Crystal Organic Semiconductor (Adv. Mater. 12/2006)

Local surface measurements of rubrene single crystals reveal interesting insights on carrier-transport mechanisms at the active interface of high-performance field-effect “air-gap stamp” transistors, as reported by Fichou, Rogers, and co-workers on p. 1552. Scanning tunneling microscopy (STM, tip shown schematically) images, combined with atomic force microscopy and X-ray diffraction, reveal directly the position and orientation of individual molecules in the a–b plane. Local current–voltage curves recorded using STM in the dark and under illumination indicate a rectifying p-type behavior.

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