Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Peter Gregory, Deputy Editors: Martin Ottmar, Carolina Novo da Silva, Lorna Stimson
Online ISSN: 1521-4095
Associated Title(s): Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials Interfaces, Advanced Optical Materials, Particle & Particle Systems Characterization, Small
Cover Picture: Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings (Adv. Mater. 14/2007)
On p. 1801, Lars Samuelson and co-workers report on InAs nanowires that are grown directly on Si substrates by employing self-assembled organic coatings to create an oxide template which guides nanowire nucleation. The nanowires extend vertically from the Si(111) substrate (foreground). No metal catalysts are used, and the InAs crystal extends to the nanowire tip as shown in the atomically resolved transmission electron microscopy image (dome background). The reported method constitutes a promising approach to the integration of new components into existing Si technology.