20_07b/2008Inside Front Cover: Residual Layer Self-Removal in Imprint Lithography (Adv. Mater. 7/2008)

A new method for imprinting residual-layer-free polymer micro- and nanostructures, particularly 3D structures with overhangs, is demonstrated on p. 1291 by Jared Dumond and Hong Yee Low. This simple and versatile method induces self-removal of the residual layer by its controlled failure along the edges of the imprinted features (AFM image, center). Pristine overhang structures are realized without exposure to plasma or chemical etching agents (SEM image, upper left).

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