21_23b/2009Nanowire-Templated Epitaxial Growth: Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire (Adv. Mater. 23/2009)

George Wang and co-workers report on p. 2416 that low dislocation density a-plane GaN films can be grown by the coalescence of vertically-aligned, single-crystalline GaN nanowires on lattice-mismatched r-plane sapphire. In this technique, shown by the artists' rendering on the inside cover, the nanowires facilitate dramatic strain relaxation in the suspended GaN film, leading to a large reduction in defects.

Read Full Text  | Table of Contents