Advanced Materials

Cover image for Vol. 28 Issue 17

21_24b/2009Hybrid Nonvolatile Memory Devices: One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications (Adv. Mater. 24/2009)

Takhee Lee and co-workers demonstrate on p. 2497 that 1T/1R hybrid devices consisting of a silicon transistor (p-MOSFET) and a resistive polymer memory as nonvolatile memory cell elements can be fabricated. The operation of the 1T/1R device can be controlled by the resistance states of the polymer memory device. Written or erased data in the 1T/1R devices can be maintained for more than 104 s.

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