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Editor-in-Chief: Peter Gregory, Deputy Editors: Mary Farrell, Duoduo Liang, Lorna Stimson
Online ISSN: 1521-4095
Associated Title(s): Advanced Electronic Materials, Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials Interfaces, Advanced Materials Technologies, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization, Small
Hybrid Nonvolatile Memory Devices: One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications (Adv. Mater. 24/2009)
Takhee Lee and co-workers demonstrate on p. 2497 that 1T/1R hybrid devices consisting of a silicon transistor (p-MOSFET) and a resistive polymer memory as nonvolatile memory cell elements can be fabricated. The operation of the 1T/1R device can be controlled by the resistance states of the polymer memory device. Written or erased data in the 1T/1R devices can be maintained for more than 104 s.