Advanced Materials

Cover image for Vol. 26 Issue 48

22_11b/2010Organic Memory: Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices (Adv. Mater. 11/2010)

Takhee Lee and co-workers demonstrate on p. 1228 that hybrid-type one-diode and one-resistor (1D-1R) memory devices consisting of inorganic Schottky diodes and organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D-1R array architecture improves the reading efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without cross-talk interference between cells.

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