Advanced Materials

Cover image for Vol. 28 Issue 28

22_44/2010Organic Memory: Three-Dimensional Integration of Organic Resistive Memory Devices (Adv. Mater. 44/2010)

Takhee Lee and co-workers demonstrate on p. 5048 the fabrication of three-dimensionally stacked 8 × 8 cross-bar array organic resistive memory devices. These devices show non-volatile memory switching behavior, and individual memory cells in the different layers are independently controlled and monitored. The demonstrated 3D stacking fabrication will enable high-density integration of organic memory cells and other organic-based electronics devices.

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