Advanced Materials

Cover image for Vol. 27 Issue 44

24_29i/2012Resistive Switching Memories: Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory (Adv. Mater. 29/2012)

Conductance quantization phenomena in oxide-based resistive switching memories are reported by Xiaojian Zhu, Wei Lu, Run-Wei Li, and co-workers on page 3941. These phenomena were found to relate to the atomic-scale conductive filaments formed in insulating oxides under an applied electrical field. The study shows that the quantum conductance effect can be well modulated and can be used for multi-level data storage.

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