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Editor-in-Chief: Peter Gregory, Deputy Editors: Mary Farrell, Duoduo Liang, Lorna Stimson
Online ISSN: 1521-4095
Associated Title(s): Advanced Electronic Materials, Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials Interfaces, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization, Small
Resistive Switching Memories: Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory (Adv. Mater. 29/2012)
Conductance quantization phenomena in oxide-based resistive switching memories are reported by Xiaojian Zhu, Wei Lu, Run-Wei Li, and co-workers on page 3941. These phenomena were found to relate to the atomic-scale conductive filaments formed in insulating oxides under an applied electrical field. The study shows that the quantum conductance effect can be well modulated and can be used for multi-level data storage.