Advanced Materials

Cover image for Vol. 28 Issue 36

24_44i/2012Transistors: Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation (Adv. Mater. 44/2012)

A flexible field effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance. The operating mechanism of the device is based on multileveled non-volatile current states of a polymeric semiconductor precisely controlled by various remnant polarization states of ferroelectric polymer domains. Further details can be found in the article by Cheolmin Park and co-workers on page 5910.

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