Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Peter Gregory, Deputy Editors: Mary Farrell, Duoduo Liang, Lorna Stimson
Online ISSN: 1521-4095
Associated Title(s): Advanced Electronic Materials, Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials Interfaces, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization, Small
Graphene: Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates (Adv. Mater. 7/2013)
High-quality graphene polycrystalline films are directly synthesized on dielectric silicon nitride substrates by using two-stage metal-catalyst-free chemical vapor deposition. Thus large-scale electronic devices are easily fabricated on these films without complicated transfer processes and their associated problems. The method is compatible with current Si processing techniques. Further details can be found in the article by Yunqi Liu and co-workers on page 992.