Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Peter Gregory, Deputy Editors: Mary Farrell, Duoduo Liang, Lorna Stimson
Online ISSN: 1521-4095
Associated Title(s): Advanced Electronic Materials, Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials Interfaces, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization, Small
Nanowires: Bandgap-Graded CdSxSe1–x Nanowires for High-Performance Field-Effect Transistors and Solar Cells (Adv. Mater. 8/2013)
Bandgap-graded CdSxSe1−x nanowires are utilized by Liang Li and co-workers on page 1109 for high-performance field-effect transistors and Schottky solar cells. The photovoltaic mechanism is ascribed to the Schottky junction effect and the “type II” band structure which maximizes the driving force for the injection of photoexcited electrons into the CdS through CdSxSe1-x from the CdSe by creating an optimized band alignment.