Advanced Materials

Cover image for Vol. 27 Issue 12

25_08i/2013Nanowires: Bandgap-Graded CdSxSe1–x Nanowires for High-Performance Field-Effect Transistors and Solar Cells (Adv. Mater. 8/2013)

Bandgap-graded CdSxSe1−x nanowires are utilized by Liang Li and co-workers on page 1109 for high-performance field-effect transistors and Schottky solar cells. The photovoltaic mechanism is ascribed to the Schottky junction effect and the “type II” band structure which maximizes the driving force for the injection of photoexcited electrons into the CdS through CdSxSe1-x from the CdSe by creating an optimized band alignment.

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