© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Peter Gregory, Deputy Editors: Mary Farrell, Duoduo Liang, Lorna Stimson
Online ISSN: 1521-4095
Associated Title(s): Advanced Electronic Materials, Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials Interfaces, Advanced Materials Technologies, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization, Small
Semiconductors: Evolutionary Selection Growth: Towards Template-Insensitive Preparation of Single-Crystal Layers (Adv. Mater. 9/2013)
A method in which single-crystalline functional semiconductor material can be grown on amorphous surfaces is described by Jie Song and co-workers on page 1285. Selectively defined layers of GaN are grown by metal-organic chemical vapor deposition on SiO2/Si(100) substrates utilizing the evolutionary selection of grains, enabling the formation of semiconductor crystals suitable for use in electronic and optoelectronic devices. The inside cover depicts possible device-scale integration, enabling high performance circuits utilizing compound semiconductors and Si CMOS. Cover image by Cindy Lau, scientific illustrator.