Advanced Materials

Cover image for Vol. 27 Issue 8

Editor-in-Chief: Peter Gregory, Deputy Editors: Mary Farrell, Duoduo Liang, Lorna Stimson

Online ISSN: 1521-4095

Associated Title(s): Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials Interfaces, Advanced Optical Materials, Particle & Particle Systems Characterization, Small

25_34i/2013Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)

Arrays of field-effect transistors are described by Caroline Ross, Moon-Ho Ham and co-workers on page 4723. These are based on highly aligned sub-10 nm graphene nanoribbons that are fabricated over large areas by etching CVD-grown graphene, using a mask made by the directed self-assembly of a cylindrical PS-block-PDMS block copolymer under solvent annealing guided by a removable template.

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