Advanced Materials

Cover image for Vol. 27 Issue 44

January 11, 2002

Long amorphous silicon oxide nanowires...

Long amorphous silicon oxide nanowires have been prepared in a highly ordered form, in bulk quantities by J. Liu et al. (Jan. 16th issue). The wires form on a Ga ball placed on top of an Si wafer, which acts as a source for the nanowires, in a quartz tube. The growth can be explained by a dissolution of Si in molten Ga, followed by an oxidation to SiO2, which induces the precipitation of the wires (see: Adv. Mater. 2002, 14, 122-124).

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