A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities
Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, Oliver Aubel, Uwe Mühle, Jürgen Gluch, Sven Niese, Yvonne Standke, Rüdiger Rosenkranz, Markus Löffler, Norman Vogel, Armand Beyer, Hans-Jürgen Engelmann, Peter Guttmann, Gerd Schneider and Ehrenfried Zschech
Article first published online: 17 APR 2014 | DOI: 10.1002/adem.201400088
An in situ approach using transmission X-ray microscopy and scanning transmission electron microscopy is developed to study the degradation and failure mechanisms of time dependent dielectric breakdown (TDDB) in copper/ultra-low-k interconnects. The metal migration is detected by the bright field imaging, and the Cu distribution is shown by the electron spectroscopic imaging. This approach contributes the improved understanding of the TDDB.