physica status solidi (c)

Cover image for Vol. 14 Issue 7

Editor: Stefan Hildebrandt (Editor-in-Chief)

Online ISSN: 1610-1642

Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (RRL) - Rapid Research Letters

6_05plus+b/2009Back Cover: Phys. Status Solidi C 6/S2

In the article on p. S747, Julia Danhof and co-authors are searching for a correlation between the surface morphology of InGaN quantum wells with thin GaN cap layer as observed by atomic force microscopy (AFM) and the spatial distribution of the photoluminescence (PL) signal of these samples. For the sample shown in the cover picture the meandering behaviour of the PL intensity distribution is totally uncorrelated with the surface topography. The peak-to-valley height of the surface is about 40 nm, the intensity of the PL intensity signal fluctuates from 100% (brightest spot) to 44% (darkest spot). AFM and PL images together demonstrate that the meandering structure is not caused exclusively by threading dislocations although their structure may be influenced by the position of dislocations (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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