physica status solidi (c)
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Recently Published Articles
- You have free access to this contentGreen Technology with Silicides and Related Materials (pages 1655–1657)
Professor Dr. Yoshihito Maeda and Professor Dr. Motofumi Suzuki
Article first published online: 17 DEC 2013 | DOI: 10.1002/pssc.201370030
- You have free access to this contentContents: Phys. Status Solidi C 12/2013 (pages 1649–1654)
Article first published online: 17 DEC 2013 | DOI: 10.1002/pssc.201370029
- You have free access to this contentCover Picture: Phys. Status Solidi C 12/2013
Article first published online: 17 DEC 2013 | DOI: 10.1002/pssc.201370027
Although the fabrication of nanostructures of various silicides has been widely reported, it is still difficult to fabricate well-aligned and periodic silicide nanostructures, especially for Mg2Si owing to a high vapor pressure and low condensation coefficient of Mg atoms. Periodic Mg2Si nanorod arrays were synthesized by the heat treatment of Si nanorod arrays with porous structure under Mg vapor, reported in the paper by Wen Li et al. on pp. 1796–1799. On the other hand, well-aligned and periodic Si nanorods with 370 nm in diameter and up to 500 nm in height were successfully fabricated on the surface of the Si substrate coated with a thin SiO2 layer under the assistment of monodispersed polystyrene nanospheres. The morphology of the Si nanorod arrays is preserved in the Mg2Si nanorod arrays. The cover figure shows plan-view and cross-sectional images of the nanorod arrays before and after reacting with Mg vapor at 500 °C for 10 min. In the inset of the figure, the nanorods exhibit a porous structure, which are composed of nanosized Si particles. After reacted with Mg vapor, the pores are not observed on the surface of the Mg2Si nanorods. The experimental volumetric expansion from the Si nanorods to Mg2Si nanorods is about V/VSi = 1.55 and the density of the Si nanorods with porous structure is about 48.3%. The periodic Mg2Si nanorod arrays will be useful to control thermal and/or solar radiation.
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- NMOS contact resistivity reduction with implants into silicides
K. V. Rao, Fareen Adeni Khaja, Chi-Nung Ni, Shankar Muthukrishnan, Andrew Darlak, Jianxin Lei, Adam Brand and Naushad Variam
Article first published online: 9 DEC 2013 | DOI: 10.1002/pssc.201300381