Plasma Processes and Polymers
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Online ISSN: 1612-8869
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Recently Published Articles
- Study of the VHF Plasma Etching of Micro/Nano Patterned PMMA Coated on Ultra-Thin Flexible Glass Substrates
Aparajita Mandal, Arindam Kole, Sean M. Garner and Partha Chaudhuri
Article first published online: 25 APR 2016 | DOI: 10.1002/ppap.201600016
Flexible substrates are useful for roll to roll production of photovoltaic modules. This study is interesting for understanding the plasma etching of micro/nano patterned PMMA coated on ultra-thin flexible glass substrates in a plasma reactor under very high frequency (VHF). The flexible glass substrate enabled thermal embossing processes at 165 °C, dimensional stability for sub-micron feature resolution, as well as an etch stop during plasma etching. Both the processes of surface reactions and the ion impact energy are found to play important roles in the removal of the PMMA during plasma etching depending on the etching time.
- The Effects of the Low Temperature Argon Plasma on Stem Cells Proliferation and Regeneration in Planarians
Artem Ermakov, Olga Ermakova, Alexander Skavulyak, Natalia Kreshchenko, Sergey Gudkov and Eugene Maevsky
Article first published online: 18 APR 2016 | DOI: 10.1002/ppap.201500203
Using “in vivo” flatworms (planarians) biological model we show for the first time that the low temperature argon plasma (the LTAP) stimulates or inhibits planarian regeneration process depending from the modes of action applied. It is found that observable LTAP effects are mediated by its impact on the genes expression and the proliferation of planarian stem cells, the neoblasts.
- Structural and Optical Properties of PECVD TiO2–SiO2 Mixed Oxide Films for Optical Applications
Dayu Li, Stéphane Elisabeth, Agnès Granier, Michèle Carette, Antoine Goullet and Jean-Pierre Landesman
Article first published online: 18 APR 2016 | DOI: 10.1002/ppap.201600012
The composition-dependent properties of TiO2–SiO2 mixed oxide films deposited by PECVD are investigated. By incorporating SiO bonds in the TiO2 network, the columnar morphology is removed and the film homogeneity can be improved, meanwhile, the polycrystalline structure is transformed into amorphous. Although the refractive index is decreased, the films with a good compromise of properties which can fulfil the requirements for optical waveguide applications.
- Improved Solar Cell Performance of High Quality Plasma Reduced Graphene Oxide
L. Chandana, Partha Ghosal and Subrahmanyam Challapalli
Article first published online: 18 APR 2016 | DOI: 10.1002/ppap.201600007
A facile green approach for the preparation of reduced graphene oxide (RGO), based on a non-thermal plasma jet reactor, operating in an aqueous medium under ambient conditions was developed. The emission spectrum of the discharge confirms the in situ formation of hydrogen radicals (•H) and hydroxyl radicals (•OH), which reduce the oxygen functional groups of graphene oxide (GO), under mild reaction conditions. Raman spectroscopy confirms the optimum plasma treatment time of 6 h to deliver the best RGO (ID/IG ∼ 1.5), which also showed the highest solar cell efficiency of ∼2.3% when used as a counter electrode in a typical quantum dot sensitized solar cell.
- In Situ Monitoring of Cu(In1−x,Gax)Se2 Composition and Target Poisoning by Real Time Optical Emission Spectroscopy During Deposition From a Hybrid Sputtering/Evaporation Process
Jorge Posada, Angélique Bousquet, Marie Jubault, Daniel Lincot and Eric Tomasella
Article first published online: 13 APR 2016 | DOI: 10.1002/ppap.201600020
Thanks to OES analysis, we correlate the intensity ratio measurements to the final product composition to better control the stoichiometry of Cu(In1−x,Gax)Se2 CIGS thin films, as absorbers in photovoltaic cell. The impact of the target poisoning by evaporated selenium was investigated in a hybrid co-sputtering/evaporation process. Thereby, we demonstrated that the target poisoning have a direct effect on the final composition of the CIGS-like absorbers. This effect is greater when the system switches in the Compound Sputtering Mode. Thus, it can be established that the sputtering modes detected using the OES system can be well correlated with the final product deposited.