© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: José Oliveira; Deputy Editors: Yan Li, Guangchen Xu
Online ISSN: 1613-6829
Associated Title(s): Advanced Electronic Materials, Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials, Advanced Materials Interfaces, Advanced Materials Technologies, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization
Cover Picture: Complementary Symmetry Silicon Nanowire Logic: Power-Efficient Inverters with Gain (Small 10/2006)
The cover picture illustrates a complementary symmetry-based inverter logic gate fabricated from dense arrays of silicon nanowires. Such logic circuits are highly energy efficient and exhibit gain, but require both p-type and n-type transistors (represented as the dark green and orange wires in the central drawing). The upper-left electron micrograph shows an array of the 15-nm-wide silicon nanowires that were utilized to make the inverters. The upper-right trace represents the output of the inverter: as the input (x axis) voltage is increased, the output voltage (y axis) switches from high to low. The background and bottom-right micrographs are images of the actual circuits. For more information, please read the Communication “Complementary Symmetry Silicon Nanowire Logic: Power-Efficient Inverters with Gain” by J. R. Heath and co-workers on page 1153 ff.