7_20i/2011Nanowire Switches: Resistive-Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires (Small 20/2011)

The cover picture features a resistive switching memory nanodevice based on core-shell nanowires (NWs). The background image shows as-grown Ni NWs in an anodized aluminum oxide (AAO) template. Core-shell NWs are obtained by electrodeposition of Ni NWs within an AAO template and subsequent surface oxidation to form the active oxide shell. The resulting NW has a Ni core and a NiO shell, a known oxide suitable for a metal-insulator transition in resistive switching. Nanodevices like the one in the figure are obtained by magnetically assisted assembly and electrode formation by electron-beam lithography. Nonvolatile resistance switching with a resistance window of more than 5 decades is obtained, evidencing the metal-insulator transition at the cross-point junction between the two core-shell NWs. For more information, please read the Full Paper, “Resistive- Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires” by Y. Zhang, D. Ielmini, and co-workers, starting on page 2899.

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