8_20b/2012Data Storage: MoS2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel (Small 20/2012)

On page 3111, S. Im and co-workers demonstrate top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting P(VDF-TrFE). This nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ∼5 × 103 as a programme/erase ratio. It also displays a high mobility of ∼220 cm2/V·s.

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