Advanced Functional Materials
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Joern Ritterbusch, Deputy Editors: Mary De Vita, Yan Li
Online ISSN: 1616-3028
Associated Title(s): Advanced Electronic Materials, Advanced Energy Materials, Advanced Engineering Materials, Advanced Healthcare Materials, Advanced Materials, Advanced Materials Interfaces, Advanced Materials Technologies, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization, Small
New impact factor
Advanced Functional Materials has received a 2014 Impact Factor of 11.8 - another record high for the journal!
Recently Published Articles
- Nanostructured Antimony-Doped Tin Oxide Layers with Tunable Pore Architectures as Versatile Transparent Current Collectors for Biophotovoltaics
Kristina Peters, Hasala N. Lokupitiya, David Sarauli, Mathias Labs, Mathias Pribil, Jiří Rathouský, Alexander Kuhn, Dario Leister, Morgan Stefik and Dina Fattakhova-Rohlfing
Version of Record online: 25 JUL 2016 | DOI: 10.1002/adfm.201602148
Nanostructured transparent conducting oxide layers with a tunable porosity are prepared via self-assembly of antimony-doped tin oxide nanoparticles and PEO-b-PHA polymer. The combination of adjustable pore sizes from 10 nm mesopores to 300 nm macropores with a large conducting interface makes the obtained layers versatile current collectors for bioelectronic devices incorporating large amounts of functional bioentities such as photosystem I.
- Oxidation-Resistant and Elastic Mesoporous Carbon with Single-Layer Graphene Walls
Hirotomo Nishihara, Tomoya Simura, Shunsuke Kobayashi, Keita Nomura, Raúl Berenguer, Masashi Ito, Masanobu Uchimura, Hiroshi Iden, Kazuki Arihara, Atsushi Ohma, Yuichiro Hayasaka and Takashi Kyotani
Version of Record online: 21 JUL 2016 | DOI: 10.1002/adfm.201602459
Oxidation-resistant and elastic mesoporous carbon consisting of single-layer graphene walls is prepared. The unique framework realizes a large surface area and minimal number of edge sites, thereby making the material promising for the application in electric double-layer capacitors. The framework is mechanically tough and greatly elastic, enabling an advanced force-induced adsorption control.
- Ultrafast Plasmonic Hot Electron Transfer in Au Nanoantenna/MoS2 Heterostructures
Ying Yu, Ziheng Ji, Shuai Zu, Bowen Du, Yimin Kang, Ziwei Li, Zhangkai Zhou, Kebin Shi and Zheyu Fang
Version of Record online: 21 JUL 2016 | DOI: 10.1002/adfm.201601779
In this study, the femtosecond pump-probe technique is used to measure electron transfer of the Au nanoantenna/MoS2 heterostructure, which is fabricated by the template-based sputtering method with low cost and simple procedures. The results demonstrate that plasmon-induced hot electron transfer takes place in the heterostructure in the order of 200 fs with an injected electron density of about 5.6 × 1012 cm−2.
- Broadband Photoresponse Enhancement of a High-Performance t-Se Microtube Photodetector by Plasmonic Metallic Nanoparticles
Kai Hu, Hongyu Chen, Mingming Jiang, Feng Teng, Lingxia Zheng and Xiaosheng Fang
Version of Record online: 21 JUL 2016 | DOI: 10.1002/adfm.201602408
A broadband photodetector based on a single Se microtube is demonstrated with responsivity of ≈19 mA W−1 at 610 nm and fast speed (rise time 0.32 ms and fall time 23.02 ms). The responsivity of this device is improved by Au nanoparticles via a simple sputtering method and (≈600% to ≈800%) responsivity enhancement is realized within broadband region (300–700 nm).
- Toward High-Output Organic Vertical Field Effect Transistors: Key Design Parameters
Hyukyun Kwon, Mincheol Kim, Hyunsu Cho, Hanul Moon, Jongjin Lee and Seunghyup Yoo
Version of Record online: 21 JUL 2016 | DOI: 10.1002/adfm.201601956
The operation mechanism and performance of organic vertical field effect transistors (VFETs) have been investigated. Several key factors are identified such as source/drain electrode widths, source contact resistance, and bottom active layer thickness. With the key parameters, the proposed VFET shows greater performance than conventional organic field-effect transistors with lateral channel in terms of driving capability.