Advanced Functional Materials

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Advanced Functional Materials has received a 2013 Impact Factor of 10.4 - a record high for the journal!



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Recently Published Articles

  1. Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction

    Subir Parui, Luca Pietrobon, David Ciudad, Saül Vélez, Xiangnan Sun, Fèlix Casanova, Pablo Stoliar and Luis E. Hueso

    Article first published online: 31 MAR 2015 | DOI: 10.1002/adfm.201403407

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    Graphene is an ideal candidate for the source electrode in a vertical organic field effect transistor as it has low density of states near the Dirac point and easy gate tunability of the Fermi-level. By varying the gate electric field, the energy-barrier is modulated at a graphene/molecular-semiconductor (fullerene) junction, thus opening a promising route toward molecular-semiconductor based devices.

  2. Dynamic Control of Full-Colored Emission and Quenching of Photoresponsive Conjugated Polymers by Photostimuli

    Kazuyoshi Watanabe, Hiroyuki Hayasaka, Tatsuaki Miyashita, Kenta Ueda and Kazuo Akagi

    Article first published online: 30 MAR 2015 | DOI: 10.1002/adfm.201500136

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    A series of photoresponsive and full-colored fluorescent conjugated polymers are synthesized by combining phenylene- and thienylene-based main chains with photochromic dithienylethene side chains. In chloroform solution, nanosphere solution, and solid film, the full-colored fluorescence is reversibly switchable between emission and quenching through photoisomerization of dithienylethene side chains regardless of the fluorescent colors and the polymer chain aggregation.

  3. Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage

    Jonghan Kwon, Abhishek A. Sharma, James A. Bain, Yoosuf N. Picard and Marek Skowronski

    Article first published online: 30 MAR 2015 | DOI: 10.1002/adfm.201500444

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    Structural changes induced by in situ biasing of TiN/single-crystal rutile TiO2/Pt resistive switching structures are monitored by TEM. Three elementary processes essential for resistive switching are documented: i) creation of oxygen vacancies by electrochemical reactions at low temperatures, ii) their drift in the electric field, and iii) their coalescence into (and dissociation from) planar faults.

  4. In-Depth Studies on Rapid Photochemical Activation of Various Sol–Gel Metal Oxide Films for Flexible Transparent Electronics

    Sungjun Park, Kwang-Ho Kim, Jeong-Wan Jo, Sujin Sung, Kyung-Tae Kim, Won-June Lee, Jaekyun Kim, Hyun Jae Kim, Gi-Ra Yi, Yong-Hoon Kim, Myung-Han Yoon and Sung Kyu Park

    Article first published online: 30 MAR 2015 | DOI: 10.1002/adfm.201500545

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    The general physicochemical mechanisms underlying photoactivated sol–gel reactions are described, with comprehensive chemical and structural analysis inducing rapid (<5 min) fabrication of various metal oxide films at low temperatures (<150 °C), and all-solution processed high-performance electronic devices and circuitry on ultrathin polymeric substrates is demonstrated. This will open new possibilities to prepare future electronic materials in a fast, scalable, and economic manner.

  5. Flexible and Controllable Piezo-Phototronic Pressure Mapping Sensor Matrix by ZnO NW/p-Polymer LED Array

    Rongrong Bao, Chunfeng Wang, Lin Dong, Ruomeng Yu, Kun Zhao, Zhong Lin Wang and Caofeng Pan

    Article first published online: 30 MAR 2015 | DOI: 10.1002/adfm.201500801

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    The piezo-phototronic effect is applied to prepare a flexible LED array composed of PEDOT:PSS and patterned ZnO NWs for mapping of spatial pressure distributions. The spatial resolution achieved is as high as 7 μm by fabricating ZnO nanowires on flexible substrates. By controlling the growth conditions of the ZnO nanowire array, a wide range of pressure measurements from 40 to 100 MPa are derived under different ZnO morphologies.

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