Advanced Functional Materials
Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Transistors: (Adv. Funct. Mater. 10/2009)
The inside cover picture shows ZnO-based thin-film transistors, grown at room temperature, integrated with a one-diode one-resistor (1D–1R) oxide-storage node elements, fabricated at room temperature. These stacked structures with stackable peripheral circuits offer the possibility of becoming a new building block applicable to high-density non-volatile memory devices with three-dimensionally stackable cross-point structures. Such an effective stacked memory concept utilizing an all-oxide-based device with peripheral circuits is necessary for future high-density non-volatile data storage.