Advanced Functional Materials

Cover image for Vol. 24 Issue 32

20_14b/2010Nanowires: Fabrication of Sub-10 nm Metallic Lines of Low Line-Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials (Adv. Funct. Mater. 14/2010)

This computer rendered graphic displays direct writing of sub-10 nm metallic wires of low line-width roughness using an electron beam (shown as a sinusoidal wave), as presented by M. S. M. Saifullah, D. J. Kang, U. Steiner, et al. on page 2317. Sub-10 nm metallic wires of good integrity and low line-width roughness were obtained by reducing electron-beam patterned metal naphthenate lines in a hydrogen-rich atmosphere at 500°C for 1 h.

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