Advanced Functional Materials
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Joern Ritterbusch, Deputy Editors: Mary De Vita, Yan Li
Online ISSN: 1616-3028
Associated Title(s): Advanced Electronic Materials, Advanced Energy Materials, Advanced Engineering Materials, Advanced Healthcare Materials, Advanced Materials, Advanced Materials Interfaces, Advanced Materials Technologies, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization, Small
Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013)
Fully functional crossbar array ReRAM devices with 32 × 32 memory block size are reported by Cheol Seong Hwang and co-workers on page 1440. The schematic structure of the 1 diode-1 resistor crossbar array devices is shown in the image. The adopted Schottky diode, serially connected with a unipolar resistive switching memory element, suppresses the sneak-current flow. It also controls the conducting path formation during switching and protects the memory from noise during retention.