Advanced Functional Materials

Cover image for Vol. 24 Issue 37

23_11i/2013Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013)

Fully functional crossbar array ReRAM devices with 32 × 32 memory block size are reported by Cheol Seong Hwang and co-workers on page 1440. The schematic structure of the 1 diode-1 resistor crossbar array devices is shown in the image. The adopted Schottky diode, serially connected with a unipolar resistive switching memory element, suppresses the sneak-current flow. It also controls the conducting path formation during switching and protects the memory from noise during retention.

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