physica status solidi (RRL) – Rapid Research Letters

The authors investigate surface plasmon waveguide Schottky detectors near junction breakdown. The detectors consist of an Au stripe on n-Si supporting strongly confined surface plasmons at the Au/Si interface. The detectors were excited at λ₀ = 1310 nm (below the bandgap of Si) where the detection mechanism is the internal photoelectric effect. A ∼10× increase in responsivity was measured at strong reverse biases due to plasmon-induced junction breakdown.

This work is tackling the low resistivity of p-type AlGaN layers, an obstacle for the advancement of deep ultraviolet LED technology. A room temperature resistivity of 7 kΩcm for Mg-doped Al_xGa_1–xN layers with an Al content as high as x ∼ 0.85 grown on SiC is reported. The enhanced p-type conductivity is believed to be due to reduced compensation by native defects achieved by growth conditions enabled by the distinct hot-wall MOCVD system.

Because of the complexity of the double perovskite system, there are still open questions about the violation of Goodenough–Kanamori rules in some cases. The authors chose the Bi₂FeMnO₆ (BFM) system in order to discuss three aspects in their Letter: The origin of the ferromagnetism or antiferromagnetism, the origin of in-plane/out-of-plane anisotropy, and the spin-glass-like behavior in BFM films.