physica status solidi (RRL) - Rapid Research Letters
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Editor: Stefan Hildebrandt (Managing Editor), Ingeborg Stass (Series Editor)
Impact Factor: 2.815
ISI Journal Citation Reports © Ranking: 2010: 15/68 (Physics Condensed Matter); 20/118 (Physics Applied); 40/225 (Materials Science Multidisciplinary)
Online ISSN: 1862-6270
Associated Title(s): physica status solidi (a), physica status solidi (b), physica status solidi (c)
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Recently Published Articles
- Design and maskless fabrication of ultrathin suspended membranes of GaN
I. M. Tiginyanu, V. Popa, M. A. Stevens-Kalceff, D. Gerthsen, P. Brenner and D. Pavlidis
Article first published online: 13 FEB 2012 | DOI: 10.1002/pssr.201206020

In this Letter, a breakthrough in the fabrication of ultrathin suspended membranes of non-layered crystalline solids is presented. On the example of GaN, it is shown that focused ion beam direct “writing” in combination with photoelectrochemical etching represents a versatile tool for the design and maskless fabrication of ultrathin membranes suspended over micro/nanocolumns, the spatial architecture of the obtained structures being fully defined by the ion energy/dose and etching conditions.
- Characterization of high-density bit-patterned media using ultra-high resolution magnetic force microscopy
S. N. Piramanayagam, M. Ranjbar, R. Sbiaa, A. Tavakkoli K. G. and T. C. Chong
Article first published online: 6 FEB 2012 | DOI: 10.1002/pssr.201105537

The resolution of magnetic force microscopy (MFM) can be improved by coating MFM tips with magnetic layers that have a perpendicular magnetic anisotropy (PMA). When bit-patterned media with a spacing of 10 nm between the magnetic islands were characterized, the tips with a PMA showed the flux from individual islands whereas the tip with no PMA could not resolve the patterns.
- Photoluminescence properties of selectively grown InN microcrystals
Jumpei Kamimura, Katsumi Kishino and Akihiko Kikuchi
Article first published online: 3 FEB 2012 | DOI: 10.1002/pssr.201105532

This Letter reports on the photoluminescence (PL) properties of regularly arranged InN microcrystals with m -plane sidewall facets. Narrow PL emission at 0.678 eV with a linewidth of ∼14 meV at 4 K and normal red shift of the PL peak energy with increasing temperature were observed. InN microcrystals were found to have a low carrier density and excellent optical properties without being adversely affected by surface electron accumulation, despite their relatively high surface area.

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