Graphene integration with nitride semiconductors for high power and high frequency electronics
F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon and Y. Cordier
Version of Record online: 17 OCT 2016 | DOI: 10.1002/pssa.201600460
Graphene integration with group III-nitride semiconductors can be beneficial for GaN-based optoelectronics and high power/high frequency electronics. Furthermore, systems with interesting physical properties can arise from this materials combination. As an example, by depositing a Gr layer on top of an AlGaN/GaN heterostructure, a system is obtained where the Gr Dirac fermions are separated from the electrons at the AlGaN/GaN interface by an ultra-thin barrier layer. This can find application in novel device concepts for ultra-highfrequency (THz) electronics.