physica status solidi (a)

Cover image for Vol. 214 Issue 1

Early View (Online Version of Record published before inclusion in an issue)

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

VIEW

  1. 1 - 100
  2. 101 - 104
  1. Original Papers

    1. Ge4+, Eu3+-codoped Y2SiO5 as a novel red phosphor for white LED applications

      Yan Zhang, Yuanyuan Dong, Jiayue Xu and Bo Wei

      Version of Record online: 23 JAN 2017 | DOI: 10.1002/pssa.201600731

    2. Size effect of the silicon carbide Young's modulus

      Bernd Hähnlein, Jaroslav Kovac Jr and Jörg Pezoldt

      Version of Record online: 19 JAN 2017 | DOI: 10.1002/pssa.201600390

    3. Modified high temperature vapor phase epitaxy for growth of GaN films

      G. Lukin, T. Schneider, M. Barchuk, F. Zimmermann, E. Niederschlag, O. Pätzold and M. Stelter

      Version of Record online: 17 JAN 2017 | DOI: 10.1002/pssa.201600753

    4. High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

      R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier and A. Michon

      Version of Record online: 17 JAN 2017 | DOI: 10.1002/pssa.201600436

    5. Carrier transfer and luminescence characteristics of thickness-dependent organic light-emitting diodes using transporting material as the host of emitting layer

      Kunping Guo, Shuanglong Wang, Changfeng Si, Taohong Wang, Jing Zhang, Changbo Chen, Yuelin Jing, Lianqiao Yang, Guo Chen and Bin Wei

      Version of Record online: 17 JAN 2017 | DOI: 10.1002/pssa.201600689

    6. On the use of Fe(dpm)3 as precursor for the thermal-CVD growth of hematite nanostructures

      Alberto Gasparotto, Giorgio Carraro, Chiara Maccato and Davide Barreca

      Version of Record online: 17 JAN 2017 | DOI: 10.1002/pssa.201600779

  2. Invited Articles

    1. Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques

      Shu Yang, Shenghou Liu, Yunyou Lu and Kevin J. Chen

      Version of Record online: 16 JAN 2017 | DOI: 10.1002/pssa.201600607

  3. Original Papers

    1. Spin–orbit coupling and Lorentz force enhanced efficiency of TiO2-based dye sensitized solar cells

      Udaya Mohanan Kannan, Venkat Narayana Muddisetti, Ganesh Kotnana, Jaipal Kandhadi, Lingamallu Giribabu, Surya Prakash Singh and S. Narayana Jammalamadaka

      Version of Record online: 11 JAN 2017 | DOI: 10.1002/pssa.201600691

    2. Development of AlInN photoconductors deposited by sputtering

      Arántzazu Núñez-Cascajero, Marco Jiménez-Rodríguez, Eva Monroy, Miguel González-Herráez and Fernando B. Naranjo

      Version of Record online: 10 JAN 2017 | DOI: 10.1002/pssa.201600780

    3. Nitrogen enhanced thermal stability of nickel monosilicide

      A. S. Zuruzi, D. Z. Chi and D. Mangelinck

      Version of Record online: 10 JAN 2017 | DOI: 10.1002/pssa.201600710

    4. On-axis and off-axis growth of zinc oxide nanostructures via pulsed laser deposition

      Poulami Ghosh and Ashwini K. Sharma

      Version of Record online: 10 JAN 2017 | DOI: 10.1002/pssa.201600755

    5. Optical antenna effect on SiNWs/CuS photodiodes

      Sandeep G. Yenchalwar, Sachin R. Rondiya, Pravin N. Shinde, Sandesh R. Jadkar and M. V. Shelke

      Version of Record online: 6 JAN 2017 | DOI: 10.1002/pssa.201600635

    6. Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film

      Fikadu Alema, Brian Hertog, Oleg Ledyaev, Dmitry Volovik, Grant Thoma, Ross Miller, Andrei Osinsky, Partha Mukhopadhyay, Sara Bakhshi, Haider Ali and Winston V. Schoenfeld

      Version of Record online: 5 JAN 2017 | DOI: 10.1002/pssa.201600688

    7. Nanostructured multi-crystalline silicon solar cell with isotropic etching by HF/KMnO4

      Ye Jiang, Honglie Shen, Chaofan Zheng, Tian Pu, Jing Wu, Chunbao Rui, Wangyang Yang and Yufang Li

      Version of Record online: 5 JAN 2017 | DOI: 10.1002/pssa.201600703

    8. Effects of working pressure on the structure and properties of ZnO film

      Xiaoling Fan, Juncheng Liu and Shenqiu Zhai

      Version of Record online: 5 JAN 2017 | DOI: 10.1002/pssa.201600740

    9. Improvement of m-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition

      Hironobu Tanoue, Masato Takenouchi, Tatsuya Yamashita, Shohei Wada, Zenji Yatabe, Shoji Nagaoka, Yoshihiro Naka and Yusui Nakamura

      Version of Record online: 5 JAN 2017 | DOI: 10.1002/pssa.201600603

    10. Effect of illumination on the hump phenomenon in IV characteristics of amorphous InGaZnO TFTs under positive gate-bias stress

      Yong-Jung Cho, Yeol-Hyeong Lee, Woo-Sic Kim, Byeong-Koo Kim, Kyung Tae Park and Ohyun Kim

      Version of Record online: 4 JAN 2017 | DOI: 10.1002/pssa.201600503

    11. Investigating subsurface damages in semiconductor–insulator–semiconductor solar cells with THz spectroscopy

      Ulrike Blumröder, Hannes Hempel, Kevin Füchsel, Patrick Hoyer, Astrid Bingel, Rainer Eichberger, Thomas Unold and Stefan Nolte

      Version of Record online: 30 DEC 2016 | DOI: 10.1002/pssa.201600590

    12. Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter-scale wide terraces

      Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda and Takashi Matsuoka

      Version of Record online: 27 DEC 2016 | DOI: 10.1002/pssa.201600754

    13. Optical properties of ytterbium-doped yttrium oxide ceramics

      V. I. Solomonov, V. V. Osipov, V. A. Shitov, R. N. Maksimov and A. I. Lipchak

      Version of Record online: 27 DEC 2016 | DOI: 10.1002/pssa.201600786

    14. Reduction of reverse-leakage current in selective-area-grown GaN-based core–shell nanostructure LEDs using AlGaN layers

      Ashwin K. Rishinaramangalam, Mohsen Nami, Darryl M. Shima, Ganesh Balakrishnan, Steven R. J. Brueck and Daniel F. Feezell

      Version of Record online: 22 DEC 2016 | DOI: 10.1002/pssa.201600776

    15. Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

      Mingyue Qu, Chih-Hsiang Chang, Ting Meng, Qun Zhang, Po-Tsun Liu and Han-Ping D. Shieh

      Version of Record online: 22 DEC 2016 | DOI: 10.1002/pssa.201600465

    16. A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique

      Li-Min Lin, Wen-Luh Yang, Yu-Hsien Lin, Yu-Ping Hsiao, Fun-Tat Chin and Ming-Fang Kao

      Version of Record online: 22 DEC 2016 | DOI: 10.1002/pssa.201600595

    17. Effect of Al incorporation in nonpolar m-plane GaN/AlGaN multi-quantum-wells using plasma-assisted molecular-beam epitaxy

      Caroline B. Lim, Akhil Ajay, Catherine Bougerol, Edith Bellet-Amalric, Jörg Schörmann, Mark Beeler and Eva Monroy

      Version of Record online: 21 DEC 2016 | DOI: 10.1002/pssa.201600849

    18. Zinc nitride as a potential high-mobility transparent conductor

      Xiang Cao, Yoshihiko Ninomiya and Naoomi Yamada

      Version of Record online: 20 DEC 2016 | DOI: 10.1002/pssa.201600472

    19. Thermal resistance measurement of In3SbTe2 nanowires

      J.-L. Battaglia, A. Saci, I. De, R. Cecchini, S. Selmo, M. Fanciulli, S. Cecchi and M. Longo

      Version of Record online: 19 DEC 2016 | DOI: 10.1002/pssa.201600500

    20. Luminescence dynamics in AlGaN with AlN content of 20%

      Sonia Soltani, Mouhamed Bouzidi, Alhousseynou Touré, Marina Gerhard, Ibrahim Halidou, Zied Chine, Belgacem El Jani and Mohammad Khaled Shakfa

      Version of Record online: 14 DEC 2016 | DOI: 10.1002/pssa.201600481

    21. Single layer two-dimensional O-g-C3N4: An efficient photocatalyst for improved molecular oxygen activation ability

      Yanhua Song, Xiaojie She, Jianjian Yi, Zhao Mo, Liang Liu, Hui Xu and Huaming Li

      Version of Record online: 9 DEC 2016 | DOI: 10.1002/pssa.201600704

    22. Nanocrystalline silicon emitter optimization for Si-HJ solar cells: Substrate selectivity and CO2 plasma treatment effect

      Luana Mazzarella, Simon Kirner, Onno Gabriel, Sebastian S. Schmidt, Lars Korte, Bernd Stannowski, Bernd Rech and Rutger Schlatmann

      Version of Record online: 8 DEC 2016 | DOI: 10.1002/pssa.201532958

    23. Controlled growth and spray deposition of silver nanowires for ITO-free, flexible, and high brightness OLEDs

      Abdullah S. Alshammari, F. Laurent M. Sam, Lynn J. Rozanski, Christopher A. Mills, Mohammad R. Alenezi, Michail J. Beliatis, K. D. G. Imalka Jayawardena, John M. Underwood and S. Ravi P. Silva

      Version of Record online: 8 DEC 2016 | DOI: 10.1002/pssa.201600561

    24. ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes

      Ching-Ho Tien, Shih-Hao Chuang, Huan-Min Lo, Stone Tasi, Chang-Lu Wu, Sin-Liang Ou and Dong-Sing Wuu

      Version of Record online: 8 DEC 2016 | DOI: 10.1002/pssa.201600609

    25. The improvement of stable resistive switching in Al/ZnO/Al heterostructures by integration of amorphous carbon layers

      Hua Shu Hsu, Ssu Wei Chen, Yu Ying Chang, Chih Hao Chang and Jiann Shing Lee

      Version of Record online: 7 DEC 2016 | DOI: 10.1002/pssa.201600739

    26. Copper–nickel combinatorial library screening for electrocatalytic formaldehyde oxidation

      Isabella Pötzelberger, Andrei Ionut Mardare and Achim Walter Hassel

      Version of Record online: 7 DEC 2016 | DOI: 10.1002/pssa.201600552

    27. Deep levels in low resistive Zn3P2

      K. Sierański, J. Szatkowski and A. Hajdusianek

      Version of Record online: 7 DEC 2016 | DOI: 10.1002/pssa.201600553

    28. Triangular-shaped sapphire patterning for HVPE grown AlGaN layers

      Simon Fleischmann, Eberhard Richter, Anna Mogilatenko, Ralph-Stephan Unger, Deepak Prasai, Markus Weyers and Günther Tränkle

      Version of Record online: 5 DEC 2016 | DOI: 10.1002/pssa.201600751

    29. Analysis of the losses of industrial-type PERC solar cells

      Pierre Saint-Cast, Sabrina Werner, Johannes Greulich, Ulrich Jäger, Elmar Lohmüller, Hannes Höffler and Ralf Preu

      Version of Record online: 5 DEC 2016 | DOI: 10.1002/pssa.201600708

    30. Room temperature ultraviolet light-emitting ZnO vertical nanowires prepared by electrochemical growth

      Masanobu Izaki, Jun Komori, Kairi Shimizu, Takayuki Koyama and Tsutomu Shinagawa

      Version of Record online: 5 DEC 2016 | DOI: 10.1002/pssa.201600473

    31. Incident light angle dependence of microwalled silicon solar cell efficiency for fracture transfer printing applications

      E. Yengel, H. Karaagac, V. J. Logeeswaran and M. Saif Islam

      Version of Record online: 5 DEC 2016 | DOI: 10.1002/pssa.201600724

  4. Original Articles

    1. Highly efficient organic photovoltaic cells fabricated by electrospray deposition using a non-halogenated solution

      Kazuya Takahira, Asuki Toda, Katsumi Suzuki and Takeshi Fukuda

      Version of Record online: 2 DEC 2016 | DOI: 10.1002/pssa.201600536

  5. Original Papers

    1. Fabrication of Ag nanostructures by the systematic control of annealing temperature and duration on GaN (0001) via the solid state dewetting

      Puran Pandey, Sundar Kunwar, Mao Sui, Ming-Yu Li, Quanzhen Zhang and Jihoon Lee

      Version of Record online: 30 NOV 2016 | DOI: 10.1002/pssa.201600702

    2. Mid-infrared optical and electrical properties of indium tin oxide films

      Akemi Tamanai, Thang Duy Dao, Michael Sendner, Tadaaki Nagao and Annemarie Pucci

      Version of Record online: 30 NOV 2016 | DOI: 10.1002/pssa.201600467

    3. Demonstration of the donor characteristics of Si and O defects in GaN using hybrid QM/MM

      Zijuan Xie, Yu Sui, John Buckeridge, C. Richard A. Catlow, Thomas W. Keal, Paul Sherwood, Aron Walsh, David O. Scanlon, Scott M. Woodley and Alexey A. Sokol

      Version of Record online: 30 NOV 2016 | DOI: 10.1002/pssa.201600445

  6. Original Articles

    1. Asymmetric contact in tin bismuth oxide thin film transistors

      Jianwen Yang, Yanbing Han, Ruofan Fu, Jinhua Ren and Qun Zhang

      Version of Record online: 29 NOV 2016 | DOI: 10.1002/pssa.201600589

  7. Original Papers

    1. Thermoelastic-tunable magnetic response of BiFeO3 thin film on colloidal photonic crystal substrate fabricated by pulsed laser deposition

      Zahra Sadat Azizi, Mohammad Mehdi Tehranchi, Seyedeh Mehri Hamidi, Seyed Hamed Vakili and Saeed Poormahdian

      Version of Record online: 24 NOV 2016 | DOI: 10.1002/pssa.201600505

    2. Fabrication of InGaN/GaN MQW nano-LEDs by hydrogen-environment anisotropic thermal etching

      Kohei Ogawa, Ryo Hachiya, Tomoya Mizutani, Shun Ishijima and Akihiko Kikuchi

      Version of Record online: 24 NOV 2016 | DOI: 10.1002/pssa.201600613

    3. Impact of rapid thermal annealing on Mg-implanted GaN with a SiOx/AlN cap-layer

      Wahid Khalfaoui, Thomas Oheix, Georgio El-Zammar, Roland Benoit, Frederic Cayrel, Eric Faulques, Florian Massuyeau, Arnaud Yvon, Emmanuel Collard and Daniel Alquier

      Version of Record online: 23 NOV 2016 | DOI: 10.1002/pssa.201600438

  8. Original Articles

    1. Structural, electrical, and optical properties of polycrystalline NbO2 thin films grown on glass substrates by solid phase crystallization

      Shoichiro Nakao, Hideyuki Kamisaka, Yasushi Hirose and Tetsuya Hasegawa

      Version of Record online: 22 NOV 2016 | DOI: 10.1002/pssa.201600604

  9. Original Papers

    1. Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE

      Ryan G. Banal, Masataka Imura, Daiju Tsuya, Hideo Iwai and Yasuo Koide

      Version of Record online: 22 NOV 2016 | DOI: 10.1002/pssa.201600727

    2. Studies on structural, optical, and photoelectric properties of CdS1–xSex films fabricated by selenization of chemical bath deposited CdS films

      Tianyu Lu, Han Gu, Zhenhua Ge, Lei Zhang, Wangping Wu, Zhicheng Wang, Yong Fang, Zhida Han, Bin Qian and Xuefan Jiang

      Version of Record online: 22 NOV 2016 | DOI: 10.1002/pssa.201600664

    3. Neutral beam etching for device isolation in AlGaN/GaN HEMTs

      Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Alex Guo, Shireen Warnock, Jesús A. del Alamo, Seiji Samukawa, Taiichi Otsuji and Tetsuya Suemitsu

      Version of Record online: 21 NOV 2016 | DOI: 10.1002/pssa.201600617

    4. Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED

      Daichi Taka, Takeyoshi Onuma, Takashi Shibukawa, Hiroki Nagai, Tomohiro Yamaguchi, Ja-Soon Jang, Mitsunobu Sato and Tohru Honda

      Version of Record online: 21 NOV 2016 | DOI: 10.1002/pssa.201600598

    5. Electro-mechanical properties of inkjet-printed graphene oxide nanosheets

      Ioannis Nikolaou, Hamida Hallil, Véronique Conédéra, Bernard Plano, Ollivier Tamarin, Jean-Luc Lachaud, David Talaga, Sébastien Bonhommeau, Corinne Dejous and Dominique Rebière

      Version of Record online: 17 NOV 2016 | DOI: 10.1002/pssa.201600492

    6. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells

      Saiful Alam, Suresh Sundaram, Helge Haas, Xin Li, Youssef El Gmili, Miryam E. Jamroz, Ivan C. Robin, Paul L. Voss, Jean-Paul Salvestrini and Abdallah Ougazzaden

      Version of Record online: 17 NOV 2016 | DOI: 10.1002/pssa.201600496

    7. Comparative study on noise characteristics of As and Sb-based high electron mobility transistors

      Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa and Hiroki I. Fujishiro

      Version of Record online: 17 NOV 2016 | DOI: 10.1002/pssa.201600599

    8. Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer

      Eric Frayssinet, Paul Leclaire, Jad Mohdad, Soumaya Latrach, Sébastien Chenot, Maud Nemoz, Benjamin Damilano and Yvon Cordier

      Version of Record online: 16 NOV 2016 | DOI: 10.1002/pssa.201600419

    9. Anisotropic etching of graphene in inert and oxygen atmospheres

      Florian Oberhuber, Stefan Blien, Felix Schupp, Dieter Weiss and Jonathan Eroms

      Version of Record online: 16 NOV 2016 | DOI: 10.1002/pssa.201600459

    10. The impact of interface and border traps on current–voltage, capacitance–voltage, and split-CV mobility measurements in InGaAs MOSFETs

      Paolo Pavan, Nicolò Zagni, Francesco Maria Puglisi, Alireza Alian, Aaron Voon-Yew Thean, Nadine Collaert and Giovanni Verzellesi

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201600592

    11. Effects of polysilane-doped spiro-OMeTAD hole transport layers on photovoltaic properties

      Yasuhiro Shirahata, Yuki Yamomoto, Atsushi Suzuki, Takeo Oku, Sakiko Fukunishi and Kazufumi Kohno

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201600591

    12. All-diamond functional surface micro-electrode arrays for brain-slice neural analysis

      Farnoosh Vahidpour, Lowry Curley, István Biró, Matthew McDonald, Dieter Croux, Paulius Pobedinskas, Ken Haenen, Michele Giugliano, Zuzana Vlčková Živcová, Ladislav Kavan and Milos Nesládek

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201532347

    13. Channel width effect on the operation of 4H-SiC vertical JFETs

      K. Vamvoukakis, D. Stefanakis, A. Stavrinidis, K. Vassilevski, G. Konstantinidis, M. Kayambaki and K. Zekentes

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201600452

    14. Electrical transport properties of p-type 4H-SiC

      Sylvie Contreras, Leszek Konczewicz, Roxana Arvinte, Hervé Peyre, Thierry Chassagne, Marcin Zielinski and Sandrine Juillaguet

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201600679

    15. Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

      H. Ben Ammar, A. Minj, P. Gamarra, C. Lacam, M. Tordjman, M. A. di Forte-Poisson, M. Morales, M. P. Chauvat and P. Ruterana

      Version of Record online: 11 NOV 2016 | DOI: 10.1002/pssa.201600441

    16. Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion

      Ruize Sun, Yung C. Liang, Yee-Chia Yeo, Yun-Hsiang Wang and Cezhou Zhao

      Version of Record online: 11 NOV 2016 | DOI: 10.1002/pssa.201600562

    17. Physics-based modeling and performance analysis of dual junction perovskite/silicon tandem solar cells

      Mahnaz Islam, Sumaiya Wahid and Md. Kawsar Alam

      Version of Record online: 11 NOV 2016 | DOI: 10.1002/pssa.201600306

    18. Ti/Al-based contacts to p-type SiC and GaN for power device applications

      F. Roccaforte, M. Vivona, G. Greco, R. Lo Nigro, F. Giannazzo, S. Di Franco, C. Bongiorno, F. Iucolano, A. Frazzetto, S. Rascunà, A. Patti and M. Saggio

      Version of Record online: 11 NOV 2016 | DOI: 10.1002/pssa.201600357

    19. Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

      Y. Kawamura, I. Shishido, S. Tanaka and S. Kawamata

      Version of Record online: 8 NOV 2016 | DOI: 10.1002/pssa.201600510

    20. Capping stability of Mg-implanted GaN layers grown on silicon

      Aurélien Lardeau-Falcy, Marianne Coig, Matthew Charles, Christophe Licitra, Yannick Baines, Joël Eymery and Frédéric Mazen

      Version of Record online: 8 NOV 2016 | DOI: 10.1002/pssa.201600487

    21. Developments in understanding the nucleation of AlN on silicon by MOCVD and its effects on defects

      Matthew Charles, Alexis Bavard, Renan Bouis, Yannick Baines and René Escoffier

      Version of Record online: 8 NOV 2016 | DOI: 10.1002/pssa.201600431

    22. Sulfur in oleylamine as a powerful and versatile etchant for oxide, sulfide, and metal colloidal nanoparticles

      Bin Yuan, Xinchun Tian, Santosh Shaw, Reese E. Petersen and Ludovico Cademartiri

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600543

    23. Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO2 contact system

      J. H. Chen, J. C. Huo, X. H. Dai, L. J. Wei, J. X. Guo, X. H. Li, L. H. Wang, C. J. Lu, J. B. Wang and B. T. Liu

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600522

    24. A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

      Guillaume Gommé, Gael Gautier, Marc Portail, Eric Frayssinet, Daniel Alquier, Yvon Cordier and Fabrice Semond

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600450

    25. Full swing depletion-load inverter with amorphous SiZnSnO thin film transistors

      Sangmin Han and Sang Yeol Lee

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600469

    26. AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

      Y. Li, G. I. Ng, S. Arulkumaran, Z. H. Liu, K. Ranjan, W. C. Xing, K. S. Ang, P. P. Murmu and J. Kennedy

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600555

    27. A study of superstrate amorphous silicon thin film solar cells and modules on flexible BZO glass

      Juanmei Duan, Xuyang Fang, Weiyan Wang, Minghua Wang, Jinhua Huang, Hongjiang Li, Weiguang Yang and Weijie Song

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600698

    28. Interface dislocations in InxGa1–xN/GaN heterostructures

      Q. T. Li, A. Minj, M. P. Chauvat, J. Chen and P. Ruterana

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600442

    29. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

      Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Yokoseki, Takahiro Makino, Shinobu Onoda, Akinori Takeyama, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie and Yasuto Hijikata

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600446

    30. Modification of reactively sputtered NiOx thin films by pulsed UV laser irradiation

      Srikanth Itapu, Daniel G. Georgiev, Prakash Uprety and Nikolas J. Podraza

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600414

    31. Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates

      E. Schilirò, P. Fiorenza, S. Di Franco, C. Bongiorno, M. Saggio, F. Roccaforte and R. Lo Nigro

      Version of Record online: 28 OCT 2016 | DOI: 10.1002/pssa.201600365

    32. Low-frequency energy harvesters made from double-layer PZT thick films on titanium plate

      Chu Wang, Ziping Cao, Jun Luo, Jinya Zhang and Ming Yuan

      Version of Record online: 28 OCT 2016 | DOI: 10.1002/pssa.201600444

    33. Radiation resistance of wide-bandgap semiconductor power transistors

      Pavel Hazdra and Stanislav Popelka

      Version of Record online: 25 OCT 2016 | DOI: 10.1002/pssa.201600447

    34. Efficient and stable inverted polymer solar cells prepared via air exposure

      Jian Xiong, Zhen He, Bingchu Yang, Junliang Yang, Ping Cai, Xiaogang Xue and Jian Zhang

      Version of Record online: 24 OCT 2016 | DOI: 10.1002/pssa.201600580

    35. Performance of barium titanate@carbon nanotube nanocomposite as an electromagnetic wave absorber

      Gan Jet Hong Melvin, Qing-Qing Ni and Zhipeng Wang

      Version of Record online: 24 OCT 2016 | DOI: 10.1002/pssa.201600541

    36. Solar cells using bulk crystals of rare metal-free compound semiconductor ZnSnP2

      Shigeru Nakatsuka, Noriyuki Yuzawa, Jakapan Chantana, Takashi Minemoto and Yoshitaro Nose

      Version of Record online: 24 OCT 2016 | DOI: 10.1002/pssa.201600650

    37. Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS-based devices

      Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti and Fabrizio Roccaforte

      Version of Record online: 21 OCT 2016 | DOI: 10.1002/pssa.201600366

    38. Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires

      Akhil S. Kumar, Dolar Khachariya, Mudassar Meer, Swaroop Ganguly and Dipankar Saha

      Version of Record online: 20 OCT 2016 | DOI: 10.1002/pssa.201600620

  10. Feature Articles

    1. Graphene integration with nitride semiconductors for high power and high frequency electronics

      F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon and Y. Cordier

      Version of Record online: 17 OCT 2016 | DOI: 10.1002/pssa.201600460

      Thumbnail image of graphical abstract

      Graphene integration with group III-nitride semiconductors can be beneficial for GaN-based optoelectronics and high power/high frequency electronics. Furthermore, systems with interesting physical properties can arise from this materials combination. As an example, by depositing a Gr layer on top of an AlGaN/GaN heterostructure, a system is obtained where the Gr Dirac fermions are separated from the electrons at the AlGaN/GaN interface by an ultra-thin barrier layer. This can find application in novel device concepts for ultra-highfrequency (THz) electronics.

  11. Original Papers

    1. Carbon nanoparticles fabricated by infrared laser ablation of graphite and polycrystalline diamond targets

      Mariusz Dudek, Adam Rosowski, Anna Koperkiewicz, Jaroslaw Grobelny, Radoslaw Wach, Martin Sharp, Paul French, Lukasz Janasz and Marcin Kozanecki

      Version of Record online: 17 OCT 2016 | DOI: 10.1002/pssa.201600318

    2. A combined growth process for state-of-the-art GaN on silicon

      Guillaume Gommé, Eric Frayssinet, Yvon Cordier and Fabrice Semond

      Version of Record online: 10 OCT 2016 | DOI: 10.1002/pssa.201600449

    3. Dynamic characteristics of 20-layer stacked QD-SOA with strain compensation technique by ultrafast signals using optical frequency comb

      Atsushi Matsumoto, Kouich Akahane, Takahide Sakamoto, Toshimasa Umezawa, Atsushi Kanno and Naokatsu Yamamoto

      Version of Record online: 10 OCT 2016 | DOI: 10.1002/pssa.201600557

    4. Experimental demonstration of strain detection using resonant tunneling delta-sigma modulation sensors

      Takumi Tajika, Yuichiro Kakutani, Masayuki Mori and Koichi Maezawa

      Version of Record online: 30 SEP 2016 | DOI: 10.1002/pssa.201600548

  12. Feature Articles

    1. Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

      Kazuhiro Mochizuki

      Version of Record online: 29 SEP 2016 | DOI: 10.1002/pssa.201600489

      Thumbnail image of graphical abstract

      Extremely large forward current can be seen in a 60-μm-diameter vertical GaN p-n diode (p-GaN: 5×1017 cm-3/0.5 μm; n-GaN: 2×1016 cm-3/10 μm) at 300 K. Such large current cannot be explained by known photon recycling assuming a practical (58 ns: solid line in the figure) or almost infinite (5 μs: dashed line in the figure) minority-carrier lifetime. “Extrinsic photon recycling”, which increases the ionization ratio of deep Mg acceptors, was instead proposed and successfully applied to reproduce the current-voltage characteristics.

  13. Original Papers

    1. Improvement of 1.0 eV GaInNAsSb solar cell performance upon optimal annealing

      Naoya Miyashita, Nazmul Ahsan and Yoshitaka Okada

      Version of Record online: 29 SEP 2016 | DOI: 10.1002/pssa.201600586

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