physica status solidi (a)

Cover image for Vol. 213 Issue 9

Early View (Online Version of Record published before inclusion in an issue)

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

VIEW

  1. 1 - 100
  2. 101 - 105
  1. Invited Articles

    1. Vibrational band structure of nanoscale phononic crystals

      R. Meyer

      Version of Record online: 28 SEP 2016 | DOI: 10.1002/pssa.201600387

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      Phononic crystals are synthetic materials that are periodically structured to control the propagation of elastic waves. Nanotechnology enables the fabrication of phononic crystals with promising technological applications in telecommunication, thermal management and energy harvesting. In this work, the vibrational properties of nanoscale phononic crystals made from silicon nanoparticles and nanowires are studied with molecular dynamics simulations and finite element method calculations.

  2. Original Papers

    1. Synthesis of polypyrrole on nanodiamonds with hydrogenated and oxidized surfaces

      Daria Miliaieva, Stepan Stehlik, Pavla Stenclova and Bohuslav Rezek

      Version of Record online: 28 SEP 2016 | DOI: 10.1002/pssa.201600278

    2. Engineering the interface characteristics on the enhancement of field electron emission properties of vertically aligned hexagonal boron nitride nanowalls

      K. J. Sankaran, D. Q. Hoang, K. Srinivasu, S. Korneychuk, S. Turner, S. Drijkoningen, P. Pobedinskas, J. Verbeeck, K. C. Leou, I. N. Lin and K. Haenen

      Version of Record online: 27 SEP 2016 | DOI: 10.1002/pssa.201600233

    3. Cu(In,Ga)Se2 solar cells with improved current based on surface treated stoichiometric absorbers

      Léo Choubrac, Tobias Bertram, Hossam Elanzeery and Susanne Siebentritt

      Version of Record online: 26 SEP 2016 | DOI: 10.1002/pssa.201600482

    4. Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

      İlkay Demir, Yoann Robin, Ryan McClintock, Sezai Elagoz, Konstantinos Zekentes and Manijeh Razeghi

      Version of Record online: 26 SEP 2016 | DOI: 10.1002/pssa.201600363

    5. Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

      Alexandre Jaud, Laurent Auvray, Abdelkarim Kahouli, Tony Abi-Tannous, François Cauwet, Gabriel Ferro and Christian Brylinski

      Version of Record online: 26 SEP 2016 | DOI: 10.1002/pssa.201600428

  3. Feature Articles

    1. Radiation effects on two-dimensional materials

      R. C. Walker II, T. Shi, E. C. Silva, I. Jovanovic and J. A. Robinson

      Version of Record online: 23 SEP 2016 | DOI: 10.1002/pssa.201600395

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      Interest in two-dimensional materials has been renewed since the isolation of graphene layers in 2004. The authors review the progress, both in recent years and from previous decades, towards determining the effects of electromagnetic and particle irradiation on the structure, properties and device performance of these materials. They also propose directions for future investigations, such as neutron beam damage studies and single event effect studies.

  4. Original Papers

    1. Monitoring of nanodiamonds in human urine using artificial neural networks

      Kirill Laptinskiy, Sergey Burikov, Sergey Dolenko, Alexander Efitorov, Olga Sarmanova, Olga Shenderova, Igor Vlasov and Tatiana Dolenko

      Version of Record online: 23 SEP 2016 | DOI: 10.1002/pssa.201600178

    2. Performances of transparent indium zinc oxide thin film transistors using ZrO2 as dielectric processed by solution method

      Jun Wei Zhao, Xin An Zhang, Shuang Li, Hai Wu Zheng, Guang Yang and Wei Feng Zhang

      Version of Record online: 22 SEP 2016 | DOI: 10.1002/pssa.201600315

    3. Direct synthesis of electrically integrated silicon nanowires forming 3D electrodes

      Nicolas Hibst and Steffen Strehle

      Version of Record online: 22 SEP 2016 | DOI: 10.1002/pssa.201600379

    4. A physics-based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

      Yunlong He, Shaopeng Zhai, Minhan Mi, Xiaowei Zhou, Xuefeng Zheng, Meng Zhang, Peng Zhang, Ling Yang, Chong Wang, Xiaohua Ma and Yue Hao

      Version of Record online: 22 SEP 2016 | DOI: 10.1002/pssa.201600504

    5. Simultaneous detection of indole and 3-methylindole using boron-doped diamond electrodes

      Dounia K. Belghiti, Emmanuel Scorsone, Jacques de Sanoit and Philippe Bergonzo

      Version of Record online: 21 SEP 2016 | DOI: 10.1002/pssa.201600187

  5. Feature Articles

    1. Amorphous and crystalline In2O3-based transparent conducting films for photovoltaics

      Takashi Koida

      Version of Record online: 20 SEP 2016 | DOI: 10.1002/pssa.201600464

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      Polycrystalline In2O3:H films prepared by crystallization of amorphous In2O3:H at low temperatures (ca. 200 °C) exhibit mobility (over 100 cm2V-1s-1) 2–3 times greater than those of conventional transparent conducting oxide films. The films contain a few atomic percent of hydrogen and the hydrogen content strongly influences the electrical, optical, and chemical properties of the films.

  6. Original Papers

    1. Infrared, transient thermal, and electrical properties of silver nanowire thin films for transparent heaters and energy-efficient coatings

      Marco Bobinger, Diego Angeli, Simone Colasanti, Paolo La Torraca, Luca Larcher and Paolo Lugli

      Version of Record online: 19 SEP 2016 | DOI: 10.1002/pssa.201600466

    2. Improvement of kesterite solar cell performance by solution synthesized MoO3 interfacial layer

      Samaneh Ranjbar, Guy Brammertz, Bart Vermang, Afshin Hadipour, Shuren Cong, Katsuaki Suganuma, Thomas Schnabel, Marc Meuris, A. F. da Cunha and Jef Poortmans

      Version of Record online: 19 SEP 2016 | DOI: 10.1002/pssa.201600534

    3. Effect of oxygen impurities in semipolar III-nitride light emitting diodes

      Friedhard Römer and Bernd Witzigmann

      Version of Record online: 19 SEP 2016 | DOI: 10.1002/pssa.201600297

    4. A comprehensive study of the optical properties of emitting polymers for efficient flexible OLED devices

      M. Gioti, D. Kokkinos, C. I. Chaidou, A. Laskarakis, A. K. Andreopoulou, J. K. Kallitsis and S. Logothetidis

      Version of Record online: 16 SEP 2016 | DOI: 10.1002/pssa.201600651

    5. Solution-dispersed CuO nanoparticles as anode buffer layer in inverted type hybrid organic solar cells

      Nasehah Syamin Sabri, Chi Chin Yap, Muhammad Yahaya, Muhamad Mat Salleh and Mohammad Hafizuddin Hj Jumali

      Version of Record online: 16 SEP 2016 | DOI: 10.1002/pssa.201600418

    6. Efficient hole-transporting layer MoO3:CuI deposited by co-evaporation in organic photovoltaic cells

      L. Barkat, M. Hssein, Z. El Jouad, L. Cattin, G. Louarn, N. Stephant, A. Khelil, M. Ghamnia, M. Addou, M. Morsli and J. C. Bernède

      Version of Record online: 13 SEP 2016 | DOI: 10.1002/pssa.201600433

    7. Effect of a rapid thermal annealing process on the electrical properties of an aluminum-doped indium zinc tin oxide thin film transistor

      Yunyong Nam, Jong-Heon Yang, Pilseong Jeong, Oh-Sang Kwon, Jae-Eun Pi, Sung Haeng Cho, Chi-Sun Hwang, Jeahan Ahn, Sanghyun Ji and Sang-Hee Ko Park

      Version of Record online: 12 SEP 2016 | DOI: 10.1002/pssa.201600490

    8. Reproducible fabrication and characterization of diamond membranes for photonic crystal cavities

      Thomas Jung, Laura Kreiner, Christoph Pauly, Frank Mücklich, Andrew Mark Edmonds, Matthew Markham and Christoph Becher

      Version of Record online: 12 SEP 2016 | DOI: 10.1002/pssa.201600656

    9. Poisson's ratio of BiFeO3 thin films: X-ray reciprocal space mapping under variable uniaxial strain

      S. Hu, A. Alsubaie, Y. Wang, J. H. Lee, K.-R. Kang, C.-H. Yang and J. Seidel

      Version of Record online: 12 SEP 2016 | DOI: 10.1002/pssa.201600356

    10. Nanostructuring GaN thin film for enhanced light emission and extraction

      Sanjay Kumar Nayak, Danish Shamoon, Jay Ghatak and Sonnada Math Shivaprasad

      Version of Record online: 9 SEP 2016 | DOI: 10.1002/pssa.201600300

    11. Enhanced thermoelectric properties in p-type Bi0.4Sb1.6Te3 alloy by combining incorporation and doping using multi-scale CuAlO2 particles

      Zijun Song, Qihao Zhang, Yuan Liu, Zhenxing Zhou, Xiaofang Lu, Lianjun Wang, Wan Jiang and Lidong Chen

      Version of Record online: 7 SEP 2016 | DOI: 10.1002/pssa.201600451

    12. An object kinetic Monte Carlo model for the microstructure evolution of neutron-irradiated reactor pressure vessel steels

      Luca Messina, Monica Chiapetto, Pär Olsson, Charlotte S. Becquart and Lorenzo Malerba

      Version of Record online: 7 SEP 2016 | DOI: 10.1002/pssa.201600038

    13. Monte Carlo studies of low-field electron transport in monolayer silicene and graphene

      Piotr Borowik, Jean-Luc Thobel and Leszek Adamowicz

      Version of Record online: 6 SEP 2016 | DOI: 10.1002/pssa.201600380

    14. Li : Mg alloy with variable work function as highly efficient cathode for organic light-emitting devices

      Yuqi Miao, Kai Xie, Qian Xiang, Zhihua Xiong, Deqiang Zhang and Lian Duan

      Version of Record online: 5 SEP 2016 | DOI: 10.1002/pssa.201600361

    15. Geometric analysis of enhanced thermal conductivity in epoxy composites: A comparison of graphite and carbon nanofiber fillers

      Anne M. Ruminski, Fan Yang, Eun Seon Cho, Joseph Silber, Edgar Olivera, Thomas Johnson, Eric C. Anderssen, Carl H. Haber and Jeffrey J. Urban

      Version of Record online: 5 SEP 2016 | DOI: 10.1002/pssa.201600368

    16. Evaluation of energy filtering effect from first principles calculations

      Xi Zhao, Xiu-hong Zhu and Rui-zhi Zhang

      Version of Record online: 5 SEP 2016 | DOI: 10.1002/pssa.201600546

    17. Self-assembled peptide nanofiber templated ALD growth of TiO2 and ZnO semiconductor nanonetworks

      Ruslan Garifullin, Hamit Eren, Turkan G. Ulusoy, Ali K. Okyay, Necmi Biyikli and Mustafa O. Guler

      Version of Record online: 1 SEP 2016 | DOI: 10.1002/pssa.201600511

    18. Electroluminescence from NiSi2/Si/NiSi2 nanowire heterostructures operated at high electric fields

      Sebastian Glassner, Priyanka Periwal, Thierry Baron, Emmerich Bertagnolli and Alois Lugstein

      Version of Record online: 1 SEP 2016 | DOI: 10.1002/pssa.201600370

  7. Review Articles

    1. Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

      Atieh R. Kermany, James S. Bennett, Victor M. Valenzuela, Warwick P. Bowen and Francesca Iacopi

      Version of Record online: 1 SEP 2016 | DOI: 10.1002/pssa.201600437

      Thumbnail image of graphical abstract

      Molecular recognition sensors with high mass accuracy are in high demand, creating thus a unique opportunity for gravimetric sensing with microresonators. This article reviews the parameters influencing the mass sensitivity and the approaches required to obtain the ultimate sensitivity with epitaxial SiC beam resonators.

  8. Original Papers

    1. Correlation of microscopic grain evolution in post-CdCl2 annealing and performance of CdS/CdTe thin-film solar cells fabricated using pulsed laser deposition

      Guanggen Zeng, Paul Harrison, Ali Kidman, Alaa Al-mebir, Lianghuan Feng and Judy Wu

      Version of Record online: 31 AUG 2016 | DOI: 10.1002/pssa.201600421

    2. Dual mechanism of photoresponse in composite Si–Au nanolayers on crystalline silicon

      Olga Ken, Denis Yavsin, Peter Dementev, Sergey Gurevich and Olga Sreseli

      Version of Record online: 31 AUG 2016 | DOI: 10.1002/pssa.201600382

  9. Expert Opinion

    1. Critical raw materials in lighting applications: Substitution opportunities and implication on their demand

      Claudiu C. Pavel, Alain Marmier, Evangelos Tzimas, Tobias Schleicher, Doris Schüler, Matthias Buchert and Darina Blagoeva

      Version of Record online: 30 AUG 2016 | DOI: 10.1002/pssa.201600594

  10. Original Papers

    1. Microwave dielectric properties of pure and Mn-doped lead-free Na0.5Bi0.5TiO3 epitaxial thin films grown on (001) LaAlO3 single crystals using pulsed laser deposition

      F. Jean, L. Huitema, A. Ghalem, M. Rammal, A. Boulle, F. Rémondière, J.-C. Orlianges, S. Députier, A. Crunteanu, D. Passerieux, M. Chatras, M. Guilloux- Viry and J.- R. Duclère

      Version of Record online: 29 AUG 2016 | DOI: 10.1002/pssa.201600209

    2. Object kinetic Monte Carlo study of the effect of grain boundaries in martensitic Fe–Cr–C alloys

      Monica Chiapetto, Lorenzo Malerba, Athina Puype and Charlotte S. Becquart

      Version of Record online: 24 AUG 2016 | DOI: 10.1002/pssa.201600294

    3. You have full text access to this OnlineOpen article
      Improved critical current densities in bulk FeSe superconductor using ball milled powders and high temperature sintering

      M. Muralidhar, K. Furutani, Dinesh Kumar, M. R. Koblischka, M. S. Ramachandra Rao and M. Murakami

      Version of Record online: 22 AUG 2016 | DOI: 10.1002/pssa.201600299

    4. You have full text access to this OnlineOpen article
      Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon

      L. I. Murin, S. B. Lastovskii, E. A. Tolkacheva, V. P. Markevich, A. R. Peaker and B. G. Svensson

      Version of Record online: 19 AUG 2016 | DOI: 10.1002/pssa.201600588

    5. Structural, optical, and mechanical properties of cobalt copper oxide coatings synthesized from low concentrations of sol–gel process

      Amun Amri, Zhong-Tao Jiang, Chun-Yang Yin, Ahmad Fadli, Mohammad Mahbubur Rahman, Syaiful Bahri, Hantarto Widjaja, Nicholas Mondinos, Tutut Herawan, Muhammad Miftahul Munir and Gadang Priyotomo

      Version of Record online: 17 AUG 2016 | DOI: 10.1002/pssa.201600207

  11. Feature Articles

    1. Technology development challenges for advanced group IV semiconductor devices

      Cor Claeys, Hiro Arimura, Nadine Collaert, Jerome Mitard, Rita Rooyackers, Eddy Simoen, Anne Vandooren, Anabela Veloso, Niamh Waldron, Liesbeth Witters and Aaron Thean

      Version of Record online: 1 AUG 2016 | DOI: 10.1002/pssa.201600494

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      Since the invention of the integrated circuit by Jack Kilby in 1958, silicon has been the driving semiconductor material. Today, there are many alternative approaches to come to sub-10 nm high performance technologies. However, even the use of Ge, III-V or 2D materials will have to be processed on a Si platform. This paper reviews technological developments for group IV semiconductors.

    2. Alternative approaches to electronic damage by ion-beam irradiation: Exciton models

      F. Agulló-López, A. Climent-Font, A. Muñoz-Martin and A. Zucchiatti

      Version of Record online: 1 AUG 2016 | DOI: 10.1002/pssa.201600037

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      The mechanisms of structural damage induced by heavy ions with energies around and above 1 MeV are, still, controversial. The basic question is how the high excitation energy deposited by the projectile on the electronic system is transferred to the crystal lattice, breaks atomic bonds and causes amorphization. Here, the authors present an up-to-date description of models based on the formation, self-trapping and recombination of bound electron-hole pairs (excitons).

  12. Original Papers

    1. AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs

      Sylvia Hagedorn, Arne Knauer, Anna Mogilatenko, Eberhard Richter and Markus Weyers

      Version of Record online: 1 AUG 2016 | DOI: 10.1002/pssa.201600218

    2. Mechanical and microstructural properties of neutron irradiated Fe–Cr–C alloys

      M. J. Konstantinović, W. Van Renterghem, M. Matijašević, B. Minov, M. Lambrecht, T. Toyama, M. Chiapetto and L. Malerba

      Version of Record online: 1 AUG 2016 | DOI: 10.1002/pssa.201600316

    3. Generation of high quality random numbers via an all-silicon-based approach

      Zahra Bisadi, Alessio Meneghetti, Alessandro Tomasi, Andrea Tengattini, Giorgio Fontana, Georg Pucker, Paolo Bettotti, Massimiliano Sala and Lorenzo Pavesi

      Version of Record online: 1 AUG 2016 | DOI: 10.1002/pssa.201600298

    4. High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes

      Jiajiang Lv, Chenju Zheng, Quan Chen, Shengjun Zhou and Sheng Liu

      Version of Record online: 1 AUG 2016 | DOI: 10.1002/pssa.201600319

    5. General approach for band gap calculation of semiconductors and insulators

      Julia Gusakova, Beng Kang Tay and Vasilii Gusakov

      Version of Record online: 1 AUG 2016 | DOI: 10.1002/pssa.201600517

    6. Modeling of radiation-induced sink evolution in 6061 aluminum alloy in nuclear reactors

      Sang Il Choi, Gyeong-Geun Lee, Junhyun Kwon and Ji Hyun Kim

      Version of Record online: 28 JUL 2016 | DOI: 10.1002/pssa.201600124

    7. Fluorescence properties of nanodiamonds with NV centers in water suspensions

      Alexey Vervald, Sergey Burikov, Nataliya Borisova, Igor Vlasov, Kirill Laptinskiy, Tatiana Laptinskaya, Olga Shenderova and Tatiana Dolenko

      Version of Record online: 28 JUL 2016 | DOI: 10.1002/pssa.201600215

    8. Production of bulk NV centre arrays by shallow implantation and diamond CVD overgrowth

      Margarita Lesik, Nicole Raatz, Alexandre Tallaire, Piernicola Spinicelli, Roger John, Jocelyn Achard, Alix Gicquel, Vincent Jacques, Jean-François Roch, Jan Meijer and Sébastien Pezzagna

      Version of Record online: 28 JUL 2016 | DOI: 10.1002/pssa.201600219

    9. Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films

      Mehmet Karaman, Özge Tüzün Özmen, Salar Habibpur Sedani, Engin Özkol and Raşit Turan

      Version of Record online: 27 JUL 2016 | DOI: 10.1002/pssa.201600197

    10. Design and performance of high temperature operating resonant-cavity photodiodes based on 795 nm-VCSEL structure

      Yongming Zhao, Yurun Sun, Yang He, Shuzhen Yu and Jianrong Dong

      Version of Record online: 27 JUL 2016 | DOI: 10.1002/pssa.201600200

    11. You have full text access to this OnlineOpen article
      Interactions of hydrogen with vanadium in crystalline silicon

      Jack Mullins, Vladimir P. Markevich, Matthew P. Halsall and Anthony R. Peaker

      Version of Record online: 27 JUL 2016 | DOI: 10.1002/pssa.201600493

    12. InGaN/GaN quantum well improved by in situ SiNx pretreatment of GaN template

      Demeng Huang, Zhengyuan Wu and Zhilai Fang

      Version of Record online: 25 JUL 2016 | DOI: 10.1002/pssa.201600157

    13. Improving the thermoelectric performance of metastable rock-salt GeTe-rich Ge–Sb–Te thin films through tuning of grain orientation and vacancies

      I-Nan Chen, Cheong-Wei Chong, Deniz P. Wong, Liang-Ming Lyu, Wei-Lun Chien, Ramakrishnan Anbalagan, Masoud Aminzare, Yang-Fang Chen, Li-Chyong Chen and Kuei-Hsien Chen

      Version of Record online: 20 JUL 2016 | DOI: 10.1002/pssa.201600274

    14. Efficiency studies on semipolar GaInN–GaN quantum well structures

      Ferdinand Scholz, Tobias Meisch and Karim Elkhouly

      Version of Record online: 19 JUL 2016 | DOI: 10.1002/pssa.201600340

    15. Long-term influence of chitin concentration on the resistance of cement pastes determined by atomic force microscopy

      Eduardo Ortega, Oliver Rodríguez-Martínez, Miguel Figueroa-Labastida, Andrés Alberto Villa-Pulido, Antonio Sánchez-Fernández, Rodrigo Cué-Sampedro, Miguel Angel Gracia-Pinilla and Jorge Luis Menchaca

      Version of Record online: 18 JUL 2016 | DOI: 10.1002/pssa.201600105

    16. Proton conducting sodium-alginate-gated oxide thin-film transistors with varying device structure

      Long Li, Hongliang Zhang, Hongtao Cao, Lili Zhang, Lingyan Liang, Junhua Gao, Fei Zhuge, Junhuai Xiang and Jumei Zhou

      Version of Record online: 18 JUL 2016 | DOI: 10.1002/pssa.201600214

  13. Review Articles

    1. Defect engineering for shallow n-type junctions in germanium: Facts and fiction

      Eddy Simoen, Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla and Nadine Collaert

      Version of Record online: 18 JUL 2016 | DOI: 10.1002/pssa.201600491

      Thumbnail image of graphical abstract

      In case you want to find out the latest in n-type doping in Ge and what co-implantation or end-of-range damage management can do for you, please have a look at this review. In addition, alternative doping and activation annealing strategies are highlighted.

  14. Original Papers

    1. Large single-crystal diamond substrates for ionizing radiation detection

      Marco Girolami, Alessandro Bellucci, Paolo Calvani and Daniele M. Trucchi

      Version of Record online: 15 JUL 2016 | DOI: 10.1002/pssa.201600262

    2. Industrial bifacial n-type silicon solar cells applying a boron co-diffused rear emitter and an aluminum rear finger grid

      Thorsten Dullweber, Nadine Wehmeier, Anja Nowack, Till Brendemühl, Sarah Kajari-Schröder and Rolf Brendel

      Version of Record online: 13 JUL 2016 | DOI: 10.1002/pssa.201600346

    3. Criterion for comparison of MPACVD reactors working at different microwave frequencies and diamond growth conditions

      V. V. Chernov, A. M. Gorbachev, A. L. Vikharev and M. A. Lobaev

      Version of Record online: 12 JUL 2016 | DOI: 10.1002/pssa.201600193

    4. Fabrication and properties of rare-earth-doped optical fiber using barium as an alternate codopant

      Anirban Dhar, Mukul Chandra Paul, Sourav Das Chowdhury, Mrinmay Pal, Atasi Pal and Ranjan Sen

      Version of Record online: 6 JUL 2016 | DOI: 10.1002/pssa.201600301

    5. Performance improvement of charge-trap memory by using a stacked Zr0.46Si0.54O2/Al2O3 charge-trapping layer

      Zhenjie Tang, Rong Li, Dan Hu, Xiwei Zhang and Yage Zhao

      Version of Record online: 6 JUL 2016 | DOI: 10.1002/pssa.201600143

  15. Feature Articles

    1. Excitons and fundamental transport properties of diamond under photo-injection

      Nobuko Naka, Hikaru Morimoto and Ikuko Akimoto

      Version of Record online: 4 JUL 2016 | DOI: 10.1002/pssa.201600237

      Thumbnail image of graphical abstract

      Recently, attempts at utilizing photo-injected carriers and excitons have been made to overcome difficulty in mobility measurement of diamond, which suffers carrier freezing at deep impurity levels. This article highlights a wealth of intriguing observations by time-resolved spectroscopy that deepens understanding of intrinsic diamond transport properties toward the realization of high-performance devices.

  16. Original Papers

    1. The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond

      Evgeny A. Ekimov, Oleg S. Kudryavtsev, Stuart Turner, Svetlana Korneychuk, Vladimir P. Sirotinkin, Tatiana A. Dolenko, Alexey M. Vervald and Igor I. Vlasov

      Version of Record online: 4 JUL 2016 | DOI: 10.1002/pssa.201600181

    2. Low-temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system

      Benoît Baudrillart, Fabien Bénédic, Amel S. Melouani, Filipe J. Oliveira, Rui F. Silva and Jocelyn Achard

      Version of Record online: 4 JUL 2016 | DOI: 10.1002/pssa.201600221

    3. Depletion-mediated piezoelectric AlGaN/GaN resonators

      Azadeh Ansari and Mina Rais-Zadeh

      Version of Record online: 30 JUN 2016 | DOI: 10.1002/pssa.201532746

    4. Perpendicular magnetic anisotropy of Pt/Co2FeAl0.5Si0.5/MgAl2O4 trilayers

      Yong Wu, Xiaoguang Xu, Lu Li, Zhicheng Wang, Jun Miao and Yong Jiang

      Version of Record online: 29 JUN 2016 | DOI: 10.1002/pssa.201600160

    5. Piezoelectric effect in wurtzite GaAs nanowires: Growth, characterization, and electromechanical 3D modeling

      Volodymyr V. Lysak, Ilya P. Soshnikov, Erkki Lahderanta and George E. Cirlin

      Version of Record online: 29 JUN 2016 | DOI: 10.1002/pssa.201600204

    6. EPR study of Si- and Ge-related defects in HPHT diamonds synthesized from Mg-based solvent-catalysts

      Vladimir Nadolinny, Andrey Komarovskikh, Yuri Palyanov, Igor Kupriyanov, Yuri Borzdov, Mariana Rakhmanova, Olga Yuryeva and Sergey Veber

      Version of Record online: 29 JUN 2016 | DOI: 10.1002/pssa.201600211

  17. Feature Articles

    1. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates

      Zi-Hui Zhang, Yonghui Zhang, Wengang Bi, Hilmi Volkan Demir and Xiao Wei Sun

      Version of Record online: 27 JUN 2016 | DOI: 10.1002/pssa.201600281

      Thumbnail image of graphical abstract

      This article is designed to review various methods and summarize the design principles to improve the internal quantum efficiency (IQE) for InGaN/GaN light-emitting diodes (LEDs). More importantly, some novel physical concepts, such as the polarization self-screening effect, the polarization cooling effect, the hole accelerator, the in-situ current spreading layer, and the hole modulator, have also been discussed and demonstrated to enhance the IQE for the LEDs.

  18. Original Papers

    1. Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon

      Nicholas E. Grant, Vladimir P. Markevich, Jack Mullins, Anthony R. Peaker, Fiacre Rougieux, Daniel Macdonald and John D. Murphy

      Version of Record online: 27 JUN 2016 | DOI: 10.1002/pssa.201600360

    2. Plasma treatment of detonation and HPHT nanodiamonds in diffuse coplanar surface barrier discharge in H2/N2 flow

      Vít Jirásek, Jan Čech, Halyna Kozak, Anna Artemenko, Mirko Černák and Alexander Kromka

      Version of Record online: 17 JUN 2016 | DOI: 10.1002/pssa.201600184

    3. Patterned Ga2O3 for current blocking and optical scattering in visible light-emitting diodes

      Seung Hwan Kim, Keon Hwa Lee, Hyun Jung Park, Shahab Shervin, Mojtaba Asadirad, Sung-Nam Lee, Joon Seop Kwak and Jae-Hyun Ryou

      Version of Record online: 17 JUN 2016 | DOI: 10.1002/pssa.201600240

    4. Stress-dislocation management in MOVPE of GaN on SiC wafers

      M. E. Rudinsky, E. V. Yakovlev, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsulnikov and L. E. Velikovskiy

      Version of Record online: 16 JUN 2016 | DOI: 10.1002/pssa.201600210

    5. Influence of free surfaces on microstructure evolution of radiation damage in Fe from molecular dynamics and object kinetic Monte Carlo calculations

      Maria J. Aliaga, Ignacio Dopico, Ignacio Martin-Bragado and Maria J. Caturla

      Version of Record online: 15 JUN 2016 | DOI: 10.1002/pssa.201600158

    6. Mullite-hexagonal di-phase multiferroic behavior with enhanced ferromagnetism of (1−x)Bi2Fe4O9xBaFe12O19 composites

      Zi-Yan Gao, Yong-Ping Pu, Jing Wei, Mou-Teng Yao, Qian Jin, Han-Yu Zheng and Ya-Ru Wang

      Version of Record online: 13 JUN 2016 | DOI: 10.1002/pssa.201600225

    7. Fano factor evaluation of diamond detectors for alpha particles

      Takehiro Shimaoka, Junichi H. Kaneko, Yuki Sato, Masakatsu Tsubota, Hiroaki Shimmyo, Akiyoshi Chayahara, Hideyuki Watanabe, Hitoshi Umezawa and Yoshiaki Mokuno

      Version of Record online: 10 JUN 2016 | DOI: 10.1002/pssa.201600195

    8. Impact of solvent selection and temperature on porosity and resistance of printed self-reducing silver inks

      Christopher Lefky, Avinash Mamidanna, Yiwen Huang and Owen Hildreth

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