physica status solidi (a)

Cover image for Vol. 213 Issue 8

Early View (Online Version of Record published before inclusion in an issue)

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

  1. Original Papers

    1. Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films

      Mehmet Karaman, Özge Tüzün Özmen, Salar Habibpur Sedani, Engin Özkol and Raşit Turan

      Version of Record online: 27 JUL 2016 | DOI: 10.1002/pssa.201600197

    2. Design and performance of high temperature operating resonant-cavity photodiodes based on 795 nm-VCSEL structure

      Yongming Zhao, Yurun Sun, Yang He, Shuzhen Yu and Jianrong Dong

      Version of Record online: 27 JUL 2016 | DOI: 10.1002/pssa.201600200

    3. You have full text access to this OnlineOpen article
      Interactions of hydrogen with vanadium in crystalline silicon

      Jack Mullins, Vladimir P. Markevich, Matthew P. Halsall and Anthony R. Peaker

      Version of Record online: 27 JUL 2016 | DOI: 10.1002/pssa.201600493

    4. InGaN/GaN quantum well improved by in situ SiNx pretreatment of GaN template

      Demeng Huang, Zhengyuan Wu and Zhilai Fang

      Version of Record online: 25 JUL 2016 | DOI: 10.1002/pssa.201600157

    5. The stability and dielectric performance of BiNbO4 prepared by citrate method assisting sintering process

      Haifa Zhai, Bei Chen, Hongying Luo, Haiqin Li, Liuyang Zheng, Jien Yang, Hairui Liu and Zhiyong Liu

      Version of Record online: 25 JUL 2016 | DOI: 10.1002/pssa.201600289

    6. Preparation of pulsed DC magnetron deposited Fe-doped SnO2 coatings

      Martin Kormunda, Daniel Fischer, Andreas Hertwig, Uwe Beck, Matej Sebik and Norbert Esser

      Version of Record online: 20 JUL 2016 | DOI: 10.1002/pssa.201532882

    7. Improving the thermoelectric performance of metastable rock-salt GeTe-rich Ge–Sb–Te thin films through tuning of grain orientation and vacancies

      I-Nan Chen, Cheong-Wei Chong, Deniz P. Wong, Liang-Ming Lyu, Wei-Lun Chien, Ramakrishnan Anbalagan, Masoud Aminzare, Yang-Fang Chen, Li-Chyong Chen and Kuei-Hsien Chen

      Version of Record online: 20 JUL 2016 | DOI: 10.1002/pssa.201600274

    8. Efficiency studies on semipolar GaInN–GaN quantum well structures

      Ferdinand Scholz, Tobias Meisch and Karim Elkhouly

      Version of Record online: 19 JUL 2016 | DOI: 10.1002/pssa.201600340

    9. Long-term influence of chitin concentration on the resistance of cement pastes determined by atomic force microscopy

      Eduardo Ortega, Oliver Rodríguez-Martínez, Miguel Figueroa-Labastida, Andrés Alberto Villa-Pulido, Antonio Sánchez-Fernández, Rodrigo Cué-Sampedro, Miguel Angel Gracia-Pinilla and Jorge Luis Menchaca

      Version of Record online: 18 JUL 2016 | DOI: 10.1002/pssa.201600105

    10. Proton conducting sodium-alginate-gated oxide thin-film transistors with varying device structure

      Long Li, Hongliang Zhang, Hongtao Cao, Lili Zhang, Lingyan Liang, Junhua Gao, Fei Zhuge, Junhuai Xiang and Jumei Zhou

      Version of Record online: 18 JUL 2016 | DOI: 10.1002/pssa.201600214

  2. Review Articles

    1. Defect engineering for shallow n-type junctions in germanium: Facts and fiction

      Eddy Simoen, Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla and Nadine Collaert

      Version of Record online: 18 JUL 2016 | DOI: 10.1002/pssa.201600491

      Thumbnail image of graphical abstract

      In case you want to find out the latest in n-type doping in Ge and what co-implantation or end-of-range damage management can do for you, please have a look at this review. In addition, alternative doping and activation annealing strategies are highlighted.

  3. Original Papers

    1. Large single-crystal diamond substrates for ionizing radiation detection

      Marco Girolami, Alessandro Bellucci, Paolo Calvani and Daniele M. Trucchi

      Version of Record online: 15 JUL 2016 | DOI: 10.1002/pssa.201600262

    2. Industrial bifacial n-type silicon solar cells applying a boron co-diffused rear emitter and an aluminum rear finger grid

      Thorsten Dullweber, Nadine Wehmeier, Anja Nowack, Till Brendemühl, Sarah Kajari-Schröder and Rolf Brendel

      Version of Record online: 13 JUL 2016 | DOI: 10.1002/pssa.201600346

    3. Criterion for comparison of MPACVD reactors working at different microwave frequencies and diamond growth conditions

      V. V. Chernov, A. M. Gorbachev, A. L. Vikharev and M. A. Lobaev

      Version of Record online: 12 JUL 2016 | DOI: 10.1002/pssa.201600193

    4. Fabrication and properties of rare-earth-doped optical fiber using barium as an alternate codopant

      Anirban Dhar, Mukul Chandra Paul, Sourav Das Chowdhury, Mrinmay Pal, Atasi Pal and Ranjan Sen

      Version of Record online: 6 JUL 2016 | DOI: 10.1002/pssa.201600301

    5. Performance improvement of charge-trap memory by using a stacked Zr0.46Si0.54O2/Al2O3 charge-trapping layer

      Zhenjie Tang, Rong Li, Dan Hu, Xiwei Zhang and Yage Zhao

      Version of Record online: 6 JUL 2016 | DOI: 10.1002/pssa.201600143

  4. Feature Articles

    1. Excitons and fundamental transport properties of diamond under photo-injection

      Nobuko Naka, Hikaru Morimoto and Ikuko Akimoto

      Version of Record online: 4 JUL 2016 | DOI: 10.1002/pssa.201600237

      Thumbnail image of graphical abstract

      Recently, attempts at utilizing photo-injected carriers and excitons have been made to overcome difficulty in mobility measurement of diamond, which suffers carrier freezing at deep impurity levels. This article highlights a wealth of intriguing observations by time-resolved spectroscopy that deepens understanding of intrinsic diamond transport properties toward the realization of high-performance devices.

  5. Original Papers