physica status solidi (a)

Cover image for Vol. 214 Issue 2

Early View (Online Version of Record published before inclusion in an issue)

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

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  1. Original Papers

    1. Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED

      Daichi Taka, Takeyoshi Onuma, Takashi Shibukawa, Hiroki Nagai, Tomohiro Yamaguchi, Ja-Soon Jang, Mitsunobu Sato and Tohru Honda

      Version of Record online: 21 NOV 2016 | DOI: 10.1002/pssa.201600598

    2. Electro-mechanical properties of inkjet-printed graphene oxide nanosheets

      Ioannis Nikolaou, Hamida Hallil, Véronique Conédéra, Bernard Plano, Ollivier Tamarin, Jean-Luc Lachaud, David Talaga, Sébastien Bonhommeau, Corinne Dejous and Dominique Rebière

      Version of Record online: 17 NOV 2016 | DOI: 10.1002/pssa.201600492

    3. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells

      Saiful Alam, Suresh Sundaram, Helge Haas, Xin Li, Youssef El Gmili, Miryam E. Jamroz, Ivan C. Robin, Paul L. Voss, Jean-Paul Salvestrini and Abdallah Ougazzaden

      Version of Record online: 17 NOV 2016 | DOI: 10.1002/pssa.201600496

    4. Comparative study on noise characteristics of As and Sb-based high electron mobility transistors

      Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa and Hiroki I. Fujishiro

      Version of Record online: 17 NOV 2016 | DOI: 10.1002/pssa.201600599

    5. Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer

      Eric Frayssinet, Paul Leclaire, Jad Mohdad, Soumaya Latrach, Sébastien Chenot, Maud Nemoz, Benjamin Damilano and Yvon Cordier

      Version of Record online: 16 NOV 2016 | DOI: 10.1002/pssa.201600419

    6. The impact of interface and border traps on current–voltage, capacitance–voltage, and split-CV mobility measurements in InGaAs MOSFETs

      Paolo Pavan, Nicolò Zagni, Francesco Maria Puglisi, Alireza Alian, Aaron Voon-Yew Thean, Nadine Collaert and Giovanni Verzellesi

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201600592

    7. Effects of polysilane-doped spiro-OMeTAD hole transport layers on photovoltaic properties

      Yasuhiro Shirahata, Yuki Yamomoto, Atsushi Suzuki, Takeo Oku, Sakiko Fukunishi and Kazufumi Kohno

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201600591

    8. Channel width effect on the operation of 4H-SiC vertical JFETs

      K. Vamvoukakis, D. Stefanakis, A. Stavrinidis, K. Vassilevski, G. Konstantinidis, M. Kayambaki and K. Zekentes

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201600452

    9. Electrical transport properties of p-type 4H-SiC

      Sylvie Contreras, Leszek Konczewicz, Roxana Arvinte, Hervé Peyre, Thierry Chassagne, Marcin Zielinski and Sandrine Juillaguet

      Version of Record online: 15 NOV 2016 | DOI: 10.1002/pssa.201600679

    10. Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

      H. Ben Ammar, A. Minj, P. Gamarra, C. Lacam, M. Tordjman, M. A. di Forte-Poisson, M. Morales, M. P. Chauvat and P. Ruterana

      Version of Record online: 11 NOV 2016 | DOI: 10.1002/pssa.201600441

    11. Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion

      Ruize Sun, Yung C. Liang, Yee-Chia Yeo, Yun-Hsiang Wang and Cezhou Zhao

      Version of Record online: 11 NOV 2016 | DOI: 10.1002/pssa.201600562

    12. Ti/Al-based contacts to p-type SiC and GaN for power device applications

      F. Roccaforte, M. Vivona, G. Greco, R. Lo Nigro, F. Giannazzo, S. Di Franco, C. Bongiorno, F. Iucolano, A. Frazzetto, S. Rascunà, A. Patti and M. Saggio

      Version of Record online: 11 NOV 2016 | DOI: 10.1002/pssa.201600357

    13. Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

      Y. Kawamura, I. Shishido, S. Tanaka and S. Kawamata

      Version of Record online: 8 NOV 2016 | DOI: 10.1002/pssa.201600510

    14. Capping stability of Mg-implanted GaN layers grown on silicon

      Aurélien Lardeau-Falcy, Marianne Coig, Matthew Charles, Christophe Licitra, Yannick Baines, Joël Eymery and Frédéric Mazen

      Version of Record online: 8 NOV 2016 | DOI: 10.1002/pssa.201600487

    15. Developments in understanding the nucleation of AlN on silicon by MOCVD and its effects on defects

      Matthew Charles, Alexis Bavard, Renan Bouis, Yannick Baines and René Escoffier

      Version of Record online: 8 NOV 2016 | DOI: 10.1002/pssa.201600431

    16. Sulfur in oleylamine as a powerful and versatile etchant for oxide, sulfide, and metal colloidal nanoparticles

      Bin Yuan, Xinchun Tian, Santosh Shaw, Reese E. Petersen and Ludovico Cademartiri

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600543

    17. A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

      Guillaume Gommé, Gael Gautier, Marc Portail, Eric Frayssinet, Daniel Alquier, Yvon Cordier and Fabrice Semond

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600450

    18. AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

      Y. Li, G. I. Ng, S. Arulkumaran, Z. H. Liu, K. Ranjan, W. C. Xing, K. S. Ang, P. P. Murmu and J. Kennedy

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600555

    19. Interface dislocations in InxGa1–xN/GaN heterostructures

      Q. T. Li, A. Minj, M. P. Chauvat, J. Chen and P. Ruterana

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600442

    20. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

      Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Yokoseki, Takahiro Makino, Shinobu Onoda, Akinori Takeyama, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie and Yasuto Hijikata

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssa.201600446

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