Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs
Kevin J. Chen, Shu Yang, Zhikai Tang, Sen Huang, Yunyou Lu, Qimeng Jiang, Shenghou Liu, Cheng Liu and Baikui Li
Article first published online: 3 DEC 2014 | DOI: 10.1002/pssa.201431712
With in situ low-damage native oxide removal, nitrogen vacancy compensation, and the formation of a monocrystal-like nitridation interfacial-layer (NIL) with Al-N bonds, a high-quality Al2O3/GaN-cap interface has been obtained in the Al2O3(NIL)/GaN/AlGaN/GaN MIS-HEMTs. It is validated that the NIL is capable of preventing the formation of detrimental Ga-O bonds and enabling the realization of high-performance III-N based MIS-HEMTs that are highly desirable in power switching applications.