physica status solidi (a)

Cover image for Vol. 212 Issue 2

Early View (Online Version of Record published before inclusion in an issue)

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

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  2. 81 - 100
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  1. Original Papers

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      Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges

      Toshiki Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki and Hiroshi Amano

      Article first published online: 8 JAN 2015 | DOI: 10.1002/pssa.201431730

    2. Preparation and characterization of F-modified C-TiO2 and its photocatalytic properties

      Qin Deng, Yan Liu, Kangsheng Mu, Yongmei Zeng, Gang Yang, Fei Shen, Shihuai Deng, Xiaohong Zhang and Yanzong Zhang

      Article first published online: 8 JAN 2015 | DOI: 10.1002/pssa.201431805

    3. Polarization modulation based on rotation of a garnet with grooved films

      Xinbing Jiao, Jun Gao and Lin Chen

      Article first published online: 7 JAN 2015 | DOI: 10.1002/pssa.201431705

    4. Low propagation loss in GaN/AlGaN-based ridge waveguides

      Ohad Westreich, Mordechai Katz, Yossi Paltiel, Orna Ternyak and Noam Sicron

      Article first published online: 2 JAN 2015 | DOI: 10.1002/pssa.201431663

    5. Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration

      Thomas Weig, Helge Höck, Katarzyna Holc, Klaus Köhler, Joachim Wagner and Ulrich T. Schwarz

      Article first published online: 30 DEC 2014 | DOI: 10.1002/pssa.201431682

    6. Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane-based low-k insulator films

      Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda and Kazukiyo Joshin

      Article first published online: 29 DEC 2014 | DOI: 10.1002/pssa.201431665

    7. Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma

      Chunho Kang, Heeyoung Jeon, Woochool Jang, Hyoseok Song, Honggi Kim, Hyunjung Kim and Hyeongtag Jeon

      Article first published online: 29 DEC 2014 | DOI: 10.1002/pssa.201431630

    8. Nanoprobe mechanical and piezoelectric characterization of ScxAl1−xN(0001) thin films

      Agnė Žukauskaitė, Esteban Broitman, Per Sandström, Lars Hultman and Jens Birch

      Article first published online: 17 DEC 2014 | DOI: 10.1002/pssa.201431634

    9. Enhancement of the R6G fluorescence by gold nanoparticle depositions in porous silicon Bragg reflectors

      Fugui Shi, Zhenhong Jia, Xiaoyi Lv, Hongyan Zhang and Jun Zhou

      Article first published online: 17 DEC 2014 | DOI: 10.1002/pssa.201431817

    10. Optimized annealing regime of CuGaSe2 nanoparticles prepared by solvothermal method

      M. Zahedifar, E. Ghanbari, M. Moradi and M. Saadat

      Article first published online: 10 DEC 2014 | DOI: 10.1002/pssa.201431543

  2. Invited Article

    1. Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

      Kevin J. Chen, Shu Yang, Zhikai Tang, Sen Huang, Yunyou Lu, Qimeng Jiang, Shenghou Liu, Cheng Liu and Baikui Li

      Article first published online: 3 DEC 2014 | DOI: 10.1002/pssa.201431712

      Thumbnail image of graphical abstract

      With in situ low-damage native oxide removal, nitrogen vacancy compensation, and the formation of a monocrystal-like nitridation interfacial-layer (NIL) with Al-N bonds, a high-quality Al2O3/GaN-cap interface has been obtained in the Al2O3(NIL)/GaN/AlGaN/GaN MIS-HEMTs. It is validated that the NIL is capable of preventing the formation of detrimental Ga-O bonds and enabling the realization of high-performance III-N based MIS-HEMTs that are highly desirable in power switching applications.

  3. Original Papers

    1. Tuning of spectral response by co-sensitization in black-dye based dye-sensitized solar cell

      Ashraful Islam, T. Swetha, Mohammad Rezaul Karim, Md. Akhtaruzzaman, Liyuan Han and Surya Prakash Singh

      Article first published online: 2 DEC 2014 | DOI: 10.1002/pssa.201431654

    2. Interface modification of polymer solar cells using graphene oxide and TiO2 NPs

      Xu Hu, Jian Xiong, Yanhong Tang, Conghua Zhou and Junliang Yang

      Article first published online: 25 NOV 2014 | DOI: 10.1002/pssa.201431565

    3. Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

      Zenji Yatabe, Joel T. Asubar, Taketomo Sato and Tamotsu Hashizume

      Article first published online: 18 NOV 2014 | DOI: 10.1002/pssa.201431652

    4. Growth and characterization of AlxGa1−xN lateral polarity structures

      Marc Patrick Hoffmann, Ronny Kirste, Seiji Mita, Wei Guo, James Tweedie, Milena Bobea, Isaac Bryan, Zachary Bryan, Michael Gerhold, Ramon Collazo and Zlatko Sitar

      Article first published online: 18 NOV 2014 | DOI: 10.1002/pssa.201431740

    5. Shunt mitigation in ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se2 solar modules by the i-ZnO/CdS buffer combination

      B. Misic, B. E. Pieters, J. P. Theisen, A. Gerber and U. Rau

      Article first published online: 14 NOV 2014 | DOI: 10.1002/pssa.201431496

    6. Analysis of direct and converse piezoelectric responses from zinc oxide nanowires grown on a conductive fabric

      Azam Khan, Mushtaque Hussain, Omer Nur, Magnus Willander and Esteban Broitman

      Article first published online: 13 NOV 2014 | DOI: 10.1002/pssa.201431625

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