physica status solidi (a)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1862-6319
Proceedings of the 4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED2002)
ISBLLED2002 was held in Córdoba, Andalusia, Spain, from March 11 to 15, 2002. This Symposium was the successor to the previous symposia held in Chiba 1996, Kazusa 1998, and Berlin 2000. Its main objective was to provide a joint forum for the GaN and ZnSe communities, gathering experts from industry and academia and students to explore issues which are common to both material systems. ISBLLED2002 covered the entire spectrum of GaN-and ZnSe-based semiconductors and their optoelectronic properties and applications, spanning from growth and substrate-epilayer constraints over heterostructures and doping to device physics, processing and reliability. Papers concentrated on a variety of topics, such as materials growth and characterization, optoelectronic properties, device design, fabrication, performance and reliability as well as novel optoelectronic devices and applications.The Proceedings are published in two parts, to be continued in the following issue of phys. stat. sol. (a) 192, No. 2 (2002).