physica status solidi (a)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1862-6319
Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: role of depletion fields and polarization fields
This issue's Editor's Choice  reports on low temperature photoluminescence (PL) investigations in InGaN multiple quantum well (MQW) structures. The figure selected for the journal cover shows PL and electroluminescence spectra of an In0.1Ga0.9N MQW sample at 2K for different applied biases. These spectra exhibit two peaks originating from various QWs located within the depletion region close to the pn-junction of the structure. The evolution of the spectra with bias illustrates the strong influence of the depletion field on the radiative recombination properties which are relevant for LED devices.This paper is a presentation from the Second International Conference on Physics of Light–Matter Coupling in Nitrides (PLMCN2), held in Rithymnon (Crete) from 25–30 May 2002. The first author, Bo Monemar, is Professor and Head of the Materials Science Division at Linköping University, working on optical and defect properties of semiconductors (more recently GaN), and is author or coauthor of about 450 scientific papers published in international journals or conference proceedings.