physica status solidi (a)

Cover image for Vol. 213 Issue 4

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

Optical and electronic properties of heavily boron-doped homo-epitaxial diamond

199_01/2003The electronic properties of heavily doped (1020–1021 [B]/cm3) p+ diamond epilayers have been investigated in the article [1] featured as Editor's choice of the present issue. Free holes affect strongly the room-temperature optical response of such monocrystalline films in the range of phonon energies. This is illustrated by the IR reflectance and edge-view micro-Raman polarized scattering spectra shown in the cover figure.The corresponding author, Etienne Bustarret, heads the Semiconductors Group of the Laboratoire d'Etudes des Propriétés Electroniques des Solides of CNRS in Grenoble, focusing on the growth of diamond and on the structural and optical properties of epitaxially grown layers and devices based on silicon carbide, diamond or nitrides.The paper was presented as an invited lecture at the 8th International Workshop on Surface and Bulk Defects in CVD Diamond Films (SBDD VIII), held in Diepenbeek-Hasselt, Belgium, 26–28 February 2003.

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