physica status solidi (a)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1862-6319
Optical and electronic properties of heavily boron-doped homo-epitaxial diamond
The electronic properties of heavily doped (1020–1021 [B]/cm3) p+ diamond epilayers have been investigated in the article  featured as Editor's choice of the present issue. Free holes affect strongly the room-temperature optical response of such monocrystalline films in the range of phonon energies. This is illustrated by the IR reflectance and edge-view micro-Raman polarized scattering spectra shown in the cover figure.The corresponding author, Etienne Bustarret, heads the Semiconductors Group of the Laboratoire d'Etudes des Propriétés Electroniques des Solides of CNRS in Grenoble, focusing on the growth of diamond and on the structural and optical properties of epitaxially grown layers and devices based on silicon carbide, diamond or nitrides.The paper was presented as an invited lecture at the 8th International Workshop on Surface and Bulk Defects in CVD Diamond Films (SBDD VIII), held in Diepenbeek-Hasselt, Belgium, 26–28 February 2003.