physica status solidi (a)

Cover image for Vol. 214 Issue 5

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5

201_14/2004Phase change optical recording, which is employed in rewritable CDs and DVDs, is based on a reversible phase transformation. A focused laser is utilized to switch between an amorphous and a crystallization state. The time limiting step is the erasure process, i.e. the recrystallization. Hence faster materials are required. To this end, doping of Ge2Sb2Te5 has been suggested. In [1] the influence of Sn doping on the phase change characteristics on Ge2Sb2Te5 is reported. For this Sn doped Ge2Sb2Te5 film, ultra- fast erasing (<10 ns) is demonstrated, which is correlated with a single NaCl structure phase and a reduced activation barrier for crystallization.

The first author, Ke Wang, is currently working as a Hum- boldt fellow at RWTH Aachen, where he studies ultra-fast chalcogenide alloys for phase change optical storage.

This issue also contains the Editor's Choice “Synthesis of single-crystalline β-Ga2O3 nanoribbons” by Z. X. Yang et al. [2].

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