physica status solidi (a)

Cover image for Vol. 212 Issue 5

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

Processing of novel SiC and group III-nitride based micro- and nanomechanical devices

202_04/2005Micro- and nanoelectromechanical systems are being designed and intensively investigated for their use in various sensor applications. In this issue's Editor's Choice [1] micromechanical resonator beams with high fundamental frequencies were realized. The cover picture shows a scanning electron microscopy image of a 3C–SiC beam with middle electrode for capacitive read-out as well as a finite element method simulation of the maximum oscillation amplitude.

The first author, Christian Förster, works on the epitaxial growth of hetero- and nanostructures based on wide band gap semiconductors and the processing of electronic and sensor devices in the Center for Micro- and Nanotechnologies of the Technical University Ilmenau, Germany.

The present issue of physica status solidi (a) contains Original Papers presented at the 7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies held in Montpellier, France, 1–4 June 2004. Further papers from EXMATEC 2004 are published in physica status solidi (c) 2, No. 4 (2005). (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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