physica status solidi (a)

Cover image for Vol. 214 Issue 3

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

205_07/2008Cover Picture: phys. stat. sol. (a) 205/7

The cover picture illustrates electroluminescence results for nonpolar a -plane 360 nm UV LEDs grown over high quality SLEO templates reported by Bilge Imer et al. (p. 1705): To overcome the obstacle of high defect densities in these devices, nonpolar a -plane GaN films were grown by sidewall lateral epitaxial overgrowth (SLEO) technique with a threading dislocation density of ∼106–107 cm–2. The device structure is depicted at the upper right. For comparison, 360 nm GaN/AlGaN multiple quantum well ultraviolet light emitting diodes were grown over planar a -plane films and reduced defect density SLEO films with metalorganic chemical vapor deposition and processed together. The photographs illustrate the emission of SLEO a -plane on wafer LEDs under the microscope. Compared with the defected planar films, the high quality SLEO material yielded ∼100–300 times higher external quantum efficiency and ∼2.5–3 times lower series resistance with an electroluminescence peak at 360 nm (lower left). (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

| Table of Contents

Cover Gallery