physica status solidi (a)

Cover image for Vol. 213 Issue 5

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

205_10b/2008Back Cover: phys. stat. sol. (a) 205/10

The picture on the back cover shows a schematic depiction of the structure of a phase-change memory cell using Ge2Sb5Te5 (GST) material (center part). During programming, the GST material is heated by the Joule effect of a current flowing through the element, and the highest temperature is obtained at the bottom electrode (heater). Phase transitions in the active GST part occur either by heating the material above the melting temperature, followed by quenching in the amorphous phase during a reset current pulse; or by heating below the melting point causing crystallization during a set current pulse (see left picture). The read-out resistance of the element is low for the crystallized state and high for the amorphous state, as depicted in the program characteristics (see right picture). For more details see the Feature Article by A. L. Lacaita and D. J. Wouters on pp. 2281–2297. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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