physica status solidi (a)

Cover image for Vol. 212 Issue 9

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

205_12b/2008Back Cover: phys. stat. sol. (a) 205/12

HfSiO5 on heavily doped n-type silicon wafers, emerging as one of “next generation” materials to replace conventional silicon-based wafers, was utilized for the first time as a high-k gate insulator for pentacene field-effect transistors (FET). The pentacene FET showed well-saturated output characteristics at low driving voltages (Vg, Vd: –10 V). The insights in the pentacene/HfSiO5 FET system gained in the article by Hu Yan et al. on p. 2970 promise to be of great benefit for future practical applications of organic FET.

The two corresponding authors Drs. Hu Yan and Hidenori Okuzaki currently work as associate professors in the Laboratory of Organic Robotics, founded at University of Yamanashi (Japan) in 2007 with a financial supporting by Tokyo Electron Ltd. Their research focuses on novel organic FETs and actuators, and their integration into completely novel and intelligent organic electronic devices. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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