physica status solidi (a)

Cover image for Vol. 214 Issue 5

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

207_06/2010Front Cover (Phys. Status Solidi A 6/2010)

Transparent semiconducting oxides are used to fabricate transistors that outperform devices based on amorphous silicon. Since the first reports on oxide transistors in 2003, the field has seen tremendous progress. Currently MESFETs exhibit superior performance compared to MISFETs. Inverters and NOR gates have been realized, enabling a complete logic based on oxide transistors. The cover image, pointing to the Feature Article by Marius Grundmann and co-workers (p. 1437), depicts a chip with a number of transparent inverters based on ZnO:Mg channels.

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