physica status solidi (a)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1862-6319
Back Cover: Interdependency of surface morphology and wavelength fluctuations of indium-rich InGaN/GaN quantum wells (Phys. Status Solidi A 5/2011)
The origin of indium fluctuations in indium-rich quantum wells is of high interest for direct green laser diodes. Teresa Lermer and co-authors (pp. 1199–1202) present the correlation of morphological features such as macro steps investigated by atomic force microscopy measurements and wavelength fluctuations seen in cathodoluminescence (CL) images of InGaN/GaN quantum wells (QW) grown by metal organic vapour phase epitaxy. The cover images show the low-temperature CL intensity plot (top left) and corresponding CL wavelength plot (top right) of the “green QW” test structure. On the bottom, a color coded intensity scan along the above yellow line is shown together with a sketch of the corresponding morphology and the different wavelength regimes. In their article, the authors present a growth model taking adsorption, desorption and migration processes into account to explain the difference of ultraviolet and green InGaN QW samples via a temperature dependent change in indium incorporation in the vicinity of the observed macro step edges.