physica status solidi (a)

Cover image for Vol. 212 Issue 9

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

208_05b/2011Back Cover: Interdependency of surface morphology and wavelength fluctuations of indium-rich InGaN/GaN quantum wells (Phys. Status Solidi A 5/2011)

The origin of indium fluctuations in indium-rich quantum wells is of high interest for direct green laser diodes. Teresa Lermer and co-authors (pp. 1199–1202) present the correlation of morphological features such as macro steps investigated by atomic force microscopy measurements and wavelength fluctuations seen in cathodoluminescence (CL) images of InGaN/GaN quantum wells (QW) grown by metal organic vapour phase epitaxy. The cover images show the low-temperature CL intensity plot (top left) and corresponding CL wavelength plot (top right) of the “green QW” test structure. On the bottom, a color coded intensity scan along the above yellow line is shown together with a sketch of the corresponding morphology and the different wavelength regimes. In their article, the authors present a growth model taking adsorption, desorption and migration processes into account to explain the difference of ultraviolet and green InGaN QW samples via a temperature dependent change in indium incorporation in the vicinity of the observed macro step edges.

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