physica status solidi (a)

Cover image for Vol. 213 Issue 1

Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)

Online ISSN: 1862-6319

Associated Title(s): physica status solidi (b), physica status solidi (c), physica status solidi (RRL) - Rapid Research Letters

208_11c/2011Inside Back Cover: The properties of sol–gel processed indium-doped zinc oxide semiconductor film and its application in organic solar cells (Phys. Status Solidi A 11/2011)

Kyaw et al. (pp. 2635-2642) fabricated indium-doped zinc oxide (IZO) semiconductor films by a sol-gel process and studied the influence of doping concentration and relative humidity on the properties of these films. Furthermore, the IZO films were demonstrated as buffer layer in inverted organic solar cells to exclusively collect electrons from the bulk heterojunction. The resistivity of a buffer layer must not be too high or low: with a high-resistivity buffer (e.g. undoped sol-gel ZnO), the efficiency of the solar cell is lowered; and if the resistivity of the buffer is too low, it will cause short-circuit to the solar cell. The image on the right shows an atomic force microscopy (AFM) image of IZO film while the left one illustrates the device architecture and current-voltage characteristics of the cells with and without buffer layers.

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