physica status solidi (a)
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor: Stefan Hildebrandt (Editor-in-Chief), Sabine Bahrs (Deputy Editor)
Online ISSN: 1862-6319
Back Cover: Piezoelectric MEMS generator based on the bulk PZT/silicon wafer bonding technique (Phys. Status Solidi A 12/2011)
As shown by Tang et al. (pp. 2913-2919), a Pb(Zr,Ti)O3 (PZT) thick film with excellent properties can be fabricated by lapping bulk PZT after bonding it to a silicon wafer at 105 °C by employing epoxy resin with preferable thermostability as the intermediate adhesive layer. Based on this technique, a piezoelectric generator for micro-electro-mechanical systems (MEMS) technology was fabricated and its performance was tested. The results show that the new thick-film preparation method is compatible with MEMS technology and the PZT thick film retains the excellent performance of bulk PZT. This method provides a new way for the preparation of high performance piezoelectric MEMS energy harvesting elements.