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  1. High Temperature Coupling of IR Inactive C[DOUBLE BOND]C Mode in Complementary Metal Oxide Semiconductor Metamaterial Structure

    Dihan Hasan, Prakash Pitchappa, Chong Pei Ho and Chengkuo Lee

    Version of Record online: 6 JAN 2017 | DOI: 10.1002/adom.201600778

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    High temperature coupling of infrared (IR) inactive >C[DOUBLE BOND]C< mode is reported in a complementary metal oxide semiconductor (CMOS)-compatible refractory metamaterial filter and absorber structure. The role of strain-gradient-induced dipole moment on the activation of >C[DOUBLE BOND]C< vibration at IR is confirmed. The study sets paths toward a more efficient design of spectrally selective thermophotovoltaic energy emitters and novel mechanism for high temperature sensing.

  2. Eu3+-Doped Phosphor-in-Glass: A Route toward Tunable Multicolor Materials for Near-UV High-Power Warm-White LEDs

    Jiankun Deng, Wei Li, Haoran Zhang, Yingliang Liu, Bingfu Lei, Haiming Zhang, Lingshan Liu, Xue Bai, Haoyang Luo, Hongzhong Liu, Wei-Ren Liu and Jing Wang

    Version of Record online: 6 JAN 2017 | DOI: 10.1002/adom.201600910

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    Eu3+-doped phosphor-in-glass is prepared by combination of Sr4Al14O25:Eu2+ phosphors and Eu3+ activated glass frits to obtain a series of tunable multicolor materials. By careful regulation, such colorful Eu3+-doped phosphor-in-glass can be used for high-power warm-white-light-emitting diodes (LEDs), showing a good application prospect in solid state lighting sources.

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    Enlightening Research with a Broad Impact

    Peter Gregory, Elisabeth Nerger, Katja Paff, Anja Wecker, Szymon Wiktorowicz and Jipei Yuan

    Version of Record online: 3 JAN 2017 | DOI: 10.1002/adom.201601006

  4. Broadband High-Responsivity Photodetectors Based on Large-Scale Topological Crystalline Insulator SnTe Ultrathin Film Grown by Molecular Beam Epitaxy

    Tian Jiang, Yunyi Zang, Honghui Sun, Xin Zheng, Yu Liu, Yan Gong, Liang Fang, Xiang'ai Cheng and Ke He

    Version of Record online: 28 DEC 2016 | DOI: 10.1002/adom.201600727

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    Broadband high-responsivity photodetectors are fabricated by a simple molecular beam epitaxy process from SnTe ultrathin films. The photoconductive detectors exhibit a fast and stable photoresponse from the visible to the mid-infrared range (405 nm–3.8 µm) with a relatively high responsivity (3.75 AW−1 at 2003 nm and room temperature), which will promote the applications of broadband and sensitive optoelectronic devices.

  5. Boron Nitride Quantum Dots with Solvent-Regulated Blue/Green Photoluminescence and Electrochemiluminescent Behavior for Versatile Applications

    Mengli Liu, Yuanhong Xu, Yao Wang, Xu Chen, Xuqiang Ji, Fushuang Niu, Zhongqian Song and Jingquan Liu

    Version of Record online: 27 DEC 2016 | DOI: 10.1002/adom.201600661

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    Boron nitride quantum dots (BNQDs) with solvent-regulated blue/green photoluminescence and electrochemiluminescent behavior are prepared using liquid exfoliation–solvothermal treatment of bulk BN. The sizes, quantum yields, and optical properties of the BNQDs are varied with different polarity of the tested solvents. Different kinds of BNQDs can be chosen on-demand for applications in label-free specific ferric ion detection, cell imaging, and fiber staining.