Advanced Materials Interfaces

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Special Issue on Perspectives in Interface Research

Recently Published Articles

  1. Schottky Diode Based on a Single Carbon–Nanotube–ZnO Hybrid Tetrapod for Selective Sensing Applications

    Vasile Postica, Fabian Schütt, Rainer Adelung and Oleg Lupan

    Version of Record online: 20 JUL 2017 | DOI: 10.1002/admi.201700507

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    A change in selectivity from NH3 to H2 gas by changing the operating temperature of a Schottky diode based on individual ZnO tetrapods covered with carbon nanotubes is reported. Thus, at room temperature the device has a higher response to NH3, while by increasing the temperature up to 150 °C the response to NH3 is considerably decreased while the response to H2 gas is gradually increasing.

  2. Enhanced Moisture Stability of Cesium-Containing Compositional Perovskites by a Feasible Interfacial Engineering

    Nan Li, Zonglong Zhu, Qingshun Dong, Jiangwei Li, Zhanlue Yang, Chu-Chen Chueh, Alex K.-Y. Jen and Liduo Wang

    Version of Record online: 20 JUL 2017 | DOI: 10.1002/admi.201700598

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    Deep insight into the moisture stability of Cesium-containing perovskite is gained in this work. A rapid degradation is observed along with the appearance of CsPbI3 when exposed to high-level humidity. An interfacial engineering with phenylethylammonium iodide (PEAI) is employed to retard the degradation and finally deliveres an enhanced photovoltaic performance from 13% to 17% with much improved stability.

  3. Reduction in Modulus of Suspended Sub-2 nm Single Crystalline Silicon Nanomembranes

    Xiaodong Zhu, Jiwu Lu, Haihua Pan, Zejie Zheng, Xiaodong Pi and Yi Zhao

    Version of Record online: 20 JUL 2017 | DOI: 10.1002/admi.201700529

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    Reduction in modulus of suspended sub-2 nm single crystalline silicon nanomembranes (SiNMs) with free surface, measured by atomic force microscope in contact model verified by the first-principle theory simulation, is reported. Young's modulus of 1.6 nm thick SiNMs is extremely low (E = 4 GPa) compared to that of bulk silicon.

  4. Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

    Shashank V. Inge, Neeraj K. Jaiswal and Pravin N. Kondekar

    Version of Record online: 19 JUL 2017 | DOI: 10.1002/admi.201700400

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    The IV characteristics of the two terminal devices based on GaN-F ZGaNNR configuration show negative differential resistance effect. The observed peak to valley current ratio is found to be on the order of 1014 (108) for positive (negative) bias condition which is significantly higher than the reported values for other 2D materials and pledges for upcoming device applications.

  5. Ultrafine Cobalt Phosphide Nanoparticles Embedded in Nitrogen-Doped Carbon Matrix as a Superior Anode Material for Lithium Ion Batteries

    Kunjie Zhu, Jun Liu, Site Li, Liangliang Liu, Linyu Yang, Sailin Liu, Hao Wang and Tian Xie

    Version of Record online: 19 JUL 2017 | DOI: 10.1002/admi.201700377

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    Ultrafine CoP nanoparticles embedded in nitrogen-doped carbon matrix are obtained for the first time. This novel nanostructure greatly shortens the transport length of lithium ions, effectively buffer the volume expansion during the lithiation/delithiation process, and improve the electrical conductivity in anode materials.