Advanced Materials Interfaces

A universal, simple, and easily scalable additive mediated solvent extraction approach using quaternary alkyl ammonium salts for fabricating highly luminescent hybrid perovskite thin films is demonstrated. The process demonstrates the lowest Urbach energy value, i.e., 17 meV for CH₃NH₃PbBr₃ thin films with photoluminescence quantum yields enhanced from 1% to 30% post treatment.

A change in selectivity from NH₃ to H₂ gas by changing the operating temperature of a Schottky diode based on individual ZnO tetrapods covered with carbon nanotubes is reported. Thus, at room temperature the device has a higher response to NH₃, while by increasing the temperature up to 150 °C the response to NH₃ is considerably decreased while the response to H₂ gas is gradually increasing.

Deep insight into the moisture stability of Cesium-containing perovskite is gained in this work. A rapid degradation is observed along with the appearance of CsPbI₃ when exposed to high-level humidity. An interfacial engineering with phenylethylammonium iodide (PEAI) is employed to retard the degradation and finally deliveres an enhanced photovoltaic performance from 13% to 17% with much improved stability.

Reduction in modulus of suspended sub-2 nm single crystalline silicon nanomembranes (SiNMs) with free surface, measured by atomic force microscope in contact model verified by the first-principle theory simulation, is reported. Young's modulus of 1.6 nm thick SiNMs is extremely low (E = 4 GPa) compared to that of bulk silicon.

The I–V characteristics of the two terminal devices based on GaN-F ZGaNNR configuration show negative differential resistance effect. The observed peak to valley current ratio is found to be on the order of 10¹⁴ (10⁸) for positive (negative) bias condition which is significantly higher than the reported values for other 2D materials and pledges for upcoming device applications.