Recently Published Issues

See all

Free online access to all content published from launch to the end of December 2016.

Free online access for institutions

Recently Published Articles

  1. n-Type Doping Induced by Electron Transport Layer in Organic Photovoltaic Devices

    Jian Wang, Liang Xu, Bo Zhang, Yun-Ju Lee and Julia W. P. Hsu

    Version of Record online: 12 JAN 2017 | DOI: 10.1002/aelm.201600458

    Thumbnail image of graphical abstract

    Organic photovoltaic (OPV) devices with different electron transport layers (ETLs) can exhibit dramatically different external quantum efficiency spectra. The origin of such a difference is established to be carrier type and concentration in active layer induced by specific ETLs. Understanding substrate-induced doping can lead to better design of OPV and other organic optoelectronic devices.

  2. Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device

    Hae Jin Kim, Kyung Jean Yoon, Tae Hyung Park, Han Joon Kim, Young Jae Kwon, Xing Long Shao, Dae Eun Kwon, Yu Min Kim and Cheol Seong Hwang

    Version of Record online: 11 JAN 2017 | DOI: 10.1002/aelm.201600404

    Thumbnail image of graphical abstract

    The detailed switching model based on the Cu conducting filament (CF) configuration and the interplay between the Joule heating and electric field effects in the Pt/TiO2/Cu electrochemical metallization cell is illustrated. Detailed geometry of the CF and relative bias polarity during the reset process play a critical role in determining the reset polarity. Simulation results support the model.

  3. High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

    Agnieszka Kuc, Teresa Cusati, Elias Dib, Augusto F. Oliveira, Alessandro Fortunelli, Giuseppe Iannaccone, Thomas Heine and Gianluca Fiori

    Version of Record online: 11 JAN 2017 | DOI: 10.1002/aelm.201600399

    Thumbnail image of graphical abstract

    Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerably high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state.

  4. Fabrication of a Quasicrystal Electrode at a Low Processing Temperature via Electrohydrodynamic and Transfer Printing for use in Multifunctional Electronics

    Seoungwoong Park, Siyong Park, Sangki Park, Hochung Ryu and Jong-Jin Park

    Version of Record online: 9 JAN 2017 | DOI: 10.1002/aelm.201600440

    Thumbnail image of graphical abstract

    Fabrication of a quasicrystal electrode at a low processing temperature via electrohydrodynamic and transfer printing for use in multifunctional electronics is demonstrated using an electrohydrodynamic narrow nozzle-to-substrate distance printing method to obtain a quasicrystal electrode (transferred electrode), which can increase electrode durability with a better surface roughness and lower processing cost with low-temperature processing, for use in multifunctional electronics.

  5. Design of Molecular Spintronics Devices Containing Molybdenum Oxide as Hole Injection Layer

    Juan Pablo Prieto-Ruiz, Sara G. Miralles, Nicolas Großmann, Martin Aeschlimann, Mirko Cinchetti, Helena Prima-García and Eugenio Coronado

    Version of Record online: 6 JAN 2017 | DOI: 10.1002/aelm.201600366

    Thumbnail image of graphical abstract

    Molybdenum oxide (MoOx)is a very promising material, as it creates an interfacial dipole that increases the metal work function of the electrode. In organic electronic devices, this causes an improvement of the injection of carriers from the metal electrode into the HOMO of the organic semiconductor. However, up to now, MoOx has never been employed in molecular spintronics.

SEARCH

SEARCH BY CITATION