Advanced Electronic Materials
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Editor-in-Chief: Stefan Hildebrandt
Online ISSN: 2199-160X
Associated Title(s): Advanced Energy Materials, Advanced Engineering Materials, Advanced Functional Materials, Advanced Healthcare Materials, Advanced Materials, Advanced Materials Interfaces, Advanced Materials Technologies, Advanced Optical Materials, Advanced Science, Particle & Particle Systems Characterization, Small
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Recently Published Articles
- n-Type Doping Induced by Electron Transport Layer in Organic Photovoltaic Devices
Jian Wang, Liang Xu, Bo Zhang, Yun-Ju Lee and Julia W. P. Hsu
Version of Record online: 12 JAN 2017 | DOI: 10.1002/aelm.201600458
Organic photovoltaic (OPV) devices with different electron transport layers (ETLs) can exhibit dramatically different external quantum efficiency spectra. The origin of such a difference is established to be carrier type and concentration in active layer induced by specific ETLs. Understanding substrate-induced doping can lead to better design of OPV and other organic optoelectronic devices.
- Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device
Hae Jin Kim, Kyung Jean Yoon, Tae Hyung Park, Han Joon Kim, Young Jae Kwon, Xing Long Shao, Dae Eun Kwon, Yu Min Kim and Cheol Seong Hwang
Version of Record online: 11 JAN 2017 | DOI: 10.1002/aelm.201600404
The detailed switching model based on the Cu conducting filament (CF) configuration and the interplay between the Joule heating and electric field effects in the Pt/TiO2/Cu electrochemical metallization cell is illustrated. Detailed geometry of the CF and relative bias polarity during the reset process play a critical role in determining the reset polarity. Simulation results support the model.
- High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study
Agnieszka Kuc, Teresa Cusati, Elias Dib, Augusto F. Oliveira, Alessandro Fortunelli, Giuseppe Iannaccone, Thomas Heine and Gianluca Fiori
Version of Record online: 11 JAN 2017 | DOI: 10.1002/aelm.201600399
Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerably high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state.
- Fabrication of a Quasicrystal Electrode at a Low Processing Temperature via Electrohydrodynamic and Transfer Printing for use in Multifunctional Electronics
Seoungwoong Park, Siyong Park, Sangki Park, Hochung Ryu and Jong-Jin Park
Version of Record online: 9 JAN 2017 | DOI: 10.1002/aelm.201600440
Fabrication of a quasicrystal electrode at a low processing temperature via electrohydrodynamic and transfer printing for use in multifunctional electronics is demonstrated using an electrohydrodynamic narrow nozzle-to-substrate distance printing method to obtain a quasicrystal electrode (transferred electrode), which can increase electrode durability with a better surface roughness and lower processing cost with low-temperature processing, for use in multifunctional electronics.
- Design of Molecular Spintronics Devices Containing Molybdenum Oxide as Hole Injection Layer
Juan Pablo Prieto-Ruiz, Sara G. Miralles, Nicolas Großmann, Martin Aeschlimann, Mirko Cinchetti, Helena Prima-García and Eugenio Coronado
Version of Record online: 6 JAN 2017 | DOI: 10.1002/aelm.201600366
Molybdenum oxide (MoOx)is a very promising material, as it creates an interfacial dipole that increases the metal work function of the electrode. In organic electronic devices, this causes an improvement of the injection of carriers from the metal electrode into the HOMO of the organic semiconductor. However, up to now, MoOx has never been employed in molecular spintronics.