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Recently Published Articles

  1. Enhanced Efficiency of Perovskite Solar Cells by using Core–Ultrathin Shell Structure Ag@SiO2 Nanowires as Plasmonic Antennas

    Yang Wang, Xue Zhou, Chao Liang, Pengwei Li, Xiaotian Hu, Qingbin Cai, Yiqiang Zhang, Fengyu Li, Mingzhu Li and Yanlin Song

    Version of Record online: 16 OCT 2017 | DOI: 10.1002/aelm.201700169

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    The structural advantages and localized surface plasmon resonance effect of Ag@SiO2 nanowires are utilized to improve light harvesting, accelerate electron transmission, promote electron–hole separation, and suppress charge-carrier recombination. By optimizing the concentration of Ag@SiO2 nanowires, a high power conversion efficiency (18.03%) and a negligible photocurrent hysteresis are achieved.

  2. Ferroelectric-Like Charge Trapping Thin-Film Transistors and Their Evaluation as Memories and Synaptic Devices

    Alwin Daus, Pawel Lenarczyk, Luisa Petti, Niko Münzenrieder, Stefan Knobelspies, Giuseppe Cantarella, Christian Vogt, Giovanni A. Salvatore, Mathieu Luisier and Gerhard Tröster

    Version of Record online: 12 OCT 2017 | DOI: 10.1002/aelm.201700309

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    Multistate charge trapping in 5-nm-thick Al2O3 dielectrics on plastic is investigated. Butterfly-shaped small-signal capacitance and ferroelectric-polarization-like surface charge density are observed. Quantum-mechanical simulations confirm deep-level positive trap charges close to the anode. This defect-rich Al2O3, employed as a gate dielectric in InGaZnO4 thin-film transistors, enables a memory device with synaptic behavior suitable for neuromorphic applications.

  3. Ambipolar Organic Field-Effect Transistors Based on a Dual-Function, Ultrathin and Highly Crystalline 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT) Layer

    Shuyun Huang, Boyu Peng and Paddy Kwok Leung Chan

    Version of Record online: 11 OCT 2017 | DOI: 10.1002/aelm.201700268

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    Bilayer ambipolar OFETs based on thermal evaporation and solution shearing are fabricated. Solution-processed ultrathin films with densely packed alkyl chains function as the p-channel active layer and growth template of the upper n-type semiconductor layer. The bilayer devices show good performance with obvious improvement in electron mobility.

  4. High-Mobility Transparent p-Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics

    Naoomi Yamada, Ryuichiro Ino, Haruka Tomura, Yuumi Kondo and Yoshihiko Ninomiya

    Version of Record online: 10 OCT 2017 | DOI: 10.1002/aelm.201700298

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    Transparent p-type CuI layers with high hole mobility are fabricated on plastic sheets. The mildly heat-treated CuI layers have hole mobilities of 20 cm2 V−1 s−1, which are comparable to those of p-type GaN epilayers. Transparent p–n diodes with sufficient rectification ratio are manufactured by employing a heterojunction consisting of CuI and n-type amorphous In-Ga-Zn-O layers on plastic sheets.

  5. Complementary Switching in 3D Resistive Memory Array

    Writam Banerjee, Xiaoxin Xu, Hangbing Lv, Qi Liu, Shibing Long and Ming Liu

    Version of Record online: 10 OCT 2017 | DOI: 10.1002/aelm.201700287

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    Ultralow leakage, self-compliance, high nonlinearity, good resistance ratio, reliable memory switching (with HRTEM evidence of Ti5O9 nanofilament formation) and complementary resistive switching is achieved with a TiOx/Al2O3 bilayer submicrometer crossbar 3D-VRRAM hybrid device.