Hybrid organic/inorganic polymer films based on zirconium are grown using molecular layer deposition (MLD) techniques. The zirconium alkoxide films, known as “zircones”, are grown using sequential exposures of zirconium tert-butoxide (ZTB) and ethylene glycol (EG) as the reactants at temperatures from 105 to 195°C. In-situ quartz crystal microbalance (QCM) and ex-situ X-ray reflectivity (XRR) experiments confirm linear growth versus the number of reaction cycles. The growth rates decrease versus temperature from 1.6 Å per cycle at 105°C to 0.3 Å per cycle at 195°C. The measured density is ∼2.17 g cm⁻³ for all the growth temperatures. Transmission electron microscopy (TEM) images reveal very uniform and conformal zircone films. ZrO₂/zircone alloys are also fabricated by combining ZrO₂ atomic layer deposition (ALD) and zircone MLD at 145°C. The composition of the ZrO₂/zircone alloy is varied by adjusting the relative number of ZrO₂ ALD and zircone MLD cycles in the reaction sequence. The ZrO₂/zircone alloys display varying density, refractive index, elastic modulus, and hardness. The refractive index and elastic modulus change progressively from n = 1.63 and E= 27 ± 0.6 GPa for pure zircone MLD films, to n = 1.86 and E= 97 ± 5 GPa for pure ZrO₂ ALD films, respectively. In capacitor structures, the zircone films display low leakage currents and a dielectric constant of ∼6.7. The zircone films are also utilized as the dielectric layer in pentacene-based thin film transistors (TFTs), which display a high field effect mobility of 2.11 cm² V⁻¹ s⁻¹ operating at −3 V with an on/off current ratio of ∼10³. The zircone and ZrO₂/zircone alloy films provide a new class of hybrid organic/inorganic polymer films for many functional film applications.

Hybrid organic/inorganic films based on zirconium are grown using molecular layer deposition (MLD). Zirconium alkoxide films, known as “zircones”, are grown using sequential exposures of zirconium tert-butoxide and ethylene glycol. ZrO₂/zircone alloys are fabricated by combining ZrO₂ atomic layer deposition (ALD) and zircone MLD. The composition and properties of the ZrO₂/zircone alloys are varied by changing the relative number of ZrO₂ ALD and zircone MLD cycles in the reaction sequence.

Atomic layer deposited (ALD) 50 nm Al_xTa_yO_z mixture coatings are grown on steel for corrosion protection. In morphological and compositional analyses the coatings are found to be uniform, conformal, well-adhered, and low in defect density. Corrosion protection properties are evaluated with polarization measurements and neutral salt spray (NSS) testing. The sealing properties of the mixtures improve with increasing aluminum oxide content, whereas the protection durability improves with increasing tantalum oxide content. In comparison to single-layer and nano-laminate ALD Al₂O₃ and Ta₂O₅ coatings, all mixtures are found to have better protective properties.

Atomic layer deposition (ALD) has become an enabling technology for a wide range of applications where depositions of high quality, conformal thin films are desired. The needs of conducting materials with tailored properties call for ALD metallization processes that can meet diverse requirements in various applications. Recent developments of ALD processes for conducting materials have led to some novel ALD chemistries. Most of the ALD binary materials are formed in a typical AB sequence from two reactants. More complex ternary and doped materials can be achieved according to the same AB sequence principle through nano-lamination of two binary materials using three or more reactants. It is demonstrated that ternary and elemental materials can be deposited using two reactants with a basic ALD AB sequence. Furthermore, an ALD process is not limited to an AB sequence, an ABC sequence with a surface-controlled ALD reaction is also possible. A double replacement reaction mechanism is proposed with examples of novel processes such as TaC_xN_y, WC_x, and WN_xC_y. Recent developments of ALD metallization processes have opened up more opportunities of producing novel ALD materials for industrial applications.

Hematite (α-Fe₂O₃) thin films are obtained by atomic layer deposition (ALD) in the temperature range 200 − 350°C using ferrocene and ozone as the precursors. A micro-pulse process facilitates the precursor adsorption and shortens the ferrocene dose time to 5 s. When tested on Si(100) substrates, the growth rate is around 0.5 Å per cycle for the first 300 cycles, after which the growth becomes nonlinear. Interestingly, a linear growth can be maintained with a rate of ≈0.55 Å per cycle by TiO₂ co-deposition (cycle ratio of TiO₂/Fe₂O₃ = 1:20). Characterizations by X-ray photoemission spectroscopy (XPS), Raman spectroscopy (RS), and UV-vis absorption confirm the presence of the α-Fe₂O₃ phase after post-deposition annealing. Uniform depositions on dense ZnO nanorod arrays and anodic aluminum oxide (AAO) templates are also demonstrated, inferring that the current process is capable of coating on high (>50) aspect ratio structures.

Al-doped ZnO (AZO) films are deposited at 200°C by atomic layer deposition (ALD) on borosilicate glass and Si(001) substrates using diethylzinc (DEZ) and aluminum isopropoxide (AIP) as the Zn and Al precursors, respectively. The effect of the Zn/Al ALD cycle ratio and the AIP source temperature on the Al dopant concentration and resistivity of AZO films is carefully investigated. By changing the AIP temperature from 115°C to 135°C, at the optimal Zn/Al cycle ratio of 19:1, the Al dopant concentration ([Al]/([Al] + [Zn])) in AZO films varies from 0.15 at.-% to 2.32 at.-%. The 60 nm thick AZO films deposited at an AIP temperature of 120°C show the lowest resistivity of 9.4 × 10⁻⁴ Ω cm, with better optical transparency.

Atomic layer deposition (ALD) is traditionally used for deposition of inorganic compounds, metals, organic polymers, and hybrid inorganic/organic materials. In all these materials, the structural framework is based on covalent or metallic bonds. The present paper demonstrates the growth of thin films of metal-organic films in which weak Van der Waals forces are important. Thin films of metal quinolines based on 8-hydroxyquinoline (q) and aluminum (Alq₃), zinc (Znq₂), and titanium (possibly Tiq₄) have been deposited using ALD in the temperature range 85–200 °C. The growth rates decrease with increasing temperature from 0.7–0.4 nm per cycle at 85 °C, to zero at 200 °C. The growth dynamics have been investigated using a quartz crystal microbalance (QCM). It is found that an excess of metal precursor will etch the films. The Alq₃ material is stable towards exposure to water during deposition. The photoluminescent properties of selected metal quinoline films are reported.

Thin films of metal quinolines based on 8-hydroxyquinoline (q) and aluminum (Alq₃), zinc (Znq₂), and titanium (possibly Tiq₄) are deposited using ALD in the temperature range 85–200 °C. This demonstrates the ALD growth of structures based on weak Van der Waals forces. The Alq₃ material proves stable towards exposure to water during deposition. Films of both Alq₃ and Znq₂ are significantly photoluminescent active.

The mechanical properties of atomic layer deposition (ALD) coatings play a key role in their long-term use as encapsulation barriers for organic-based, flexible, electronic devices. Nano-indentation characteristics and flexure testing of nanometer-scale alumina on polyamide 6 (PA6) films are investigated to determine the influence of a sub-surface hybrid layer formed during the ALD process. This hybrid layer is observed to affect the mechanical performance of the thin films, in particular at lower processing temperatures. This work has important consequences on how ALD materials need to be applied and evaluated on polymers for application as encapsulation barrier layers.

Core WO₃ nanofibers (140–300 nm in diameter, several hundred µm long) are made by a novel, water-based electrospinning process using ammonium metatungstate (AMT) and polyvinylpyrrolidone (PVP) as precursors. TiO₂ shells (1.5–20 nm) are grown by atomic layer deposition (ALD) using TiCl₄ and water at 250°C. The WO₃/TiO₂ composite fibers are analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM)-energy dispersive X-ray (EDX), transmission electron microscopy (TEM), Raman spectroscopy (RS), UV-Vis spectroscopy, and X-ray photoelectron spectroscopy (XPS). The optimal photocatalytic conversion under visible light is reached by the WO₃/1.5 nm TiO₂ nanofibers, which have higher activity compared to bare WO₃ and Degussa TiO₂. Thicker TiO₂ layers fill the pores of the nanowires and reduce the specific surface area, weakening the photocatalytic activity.

TiO₂ thin films (1.5–20 nm) are grown by ALD on electrospun WO₃ nanofibers. The WO₃/1.5 nm TiO₂ composite nanofiber has the highest photocatalytic activity, and it is a better photocatalyst under visible light when compared to bare WO₃ and Degussa TiO₂.

Room-temperature atomic layer deposition (RT-ALD) processes are of interest for applications using temperature-sensitive substrates. Challenges with RT-ALD arise when the precursors are not sufficiently volatile, purge times become impractically long, and precursors or co-reactants are unreactive with the surface species. In several cases, the latter two challenges can be overcome using energy-enhanced ALD. Here, we demonstrate RT-ALD (25°C) processes for Al₂O₃, TiO₂, and SiO₂ from trimethylaluminum (Al(CH₃)₃, TMA), titanium(IV) tetraisopropoxide (Ti(OⁱPr)₄, TTIP), and bis(diethylamino)silane (SiH₂(NEt₂)₂, BDEAS) precursors with an O₂ plasma or O₃ gas as co-reactants. Saturated RT-ALD growth was obtained for all O₂ plasma processes and TMA/O₃, whereas the TTIP/O₃ and BDEAS/O₃ processes gave no growth. Using these and literature results, the criteria for viable RT-ALD processes are discussed.

Room-temperature (25°C) atomic layer deposition (RT-ALD) processes enabled by energy-enhanced ALD are investigated, using Al₂O₃, TiO₂, and SiO₂ as examples. It is suggested that, for viable RT-ALD processes, it is essential that both the metal-organic precursor and the co-reactant be sufficiently reactive with the surface groups left after the preceding respective RT-ALD half-cycle. Other criteria, such as volatile metal-organic precursors and short purge times are desirable.

A new low temperature atomic layer deposition (LT-ALD) Al₂O₃ process using trimethylaluminum (TMA) and acetic acid (CH₃COOH) is studied both theoretically and experimentally. The atomistic mechanisms of the two deposition half-cycles on Al-CH₃*, Al-OH*, and Al(η²-O₂CCH₃)* are investigated using density functional theory (DFT). The experimental demonstrations are performed on Si substrates over the growth temperature range 75–400°C. Consistent with the DFT simulation, lower linear growth rate and shorter required oxidant purge times are observed at 90°C, when compared to LT-ALD Al₂O₃ using H₂O as the oxidant. The chemical characteristics of the Al₂O₃ films grown with both CH₃COOH at 90°C and H₂O at 100°C are determined and compared using X-ray photoelectron spectroscopy (XPS).

We present a study of magnesium and calcium precursor molecules in order to predict which of them would be more successful in atomic layer deposition (ALD) of metal oxides. Precursor chemistry plays a key role in ALD, since precursors must be volatile, thermally stable, chemisorb on the surface, and react rapidly with existing surface groups. We investigate one aspect of this, surface reactivity between ligands and hydroxyl groups, via a gas-phase model with energetics computed at the level of density functional theory (DFT). The precursors with higher reactivity towards hydrolysis (and thus most potentially useful for ALD) are M(bae), M(Ph-nacnac)₂, and M(tmtate), which is rationalized as due to strain, particularly in the cyclic ligands bae and tmtate. Calculated trends for Mg and Ca follow each other closely, reflecting the similar chemistry among group 2 metals.

A study of magnesium and calcium precursor molecules with various ligands is presented in order to predict which ligands would be the most successful in atomic layer deposition (ALD) of the metal oxides. The work investigates one aspect of this, surface reactivity between ligands and hydroxyl groups, via a gas-phase model with energetics computed at the level of density functional theory (DFT).

Lithium fluoride (LiF) is an important optical material with a low refractive index and a large band gap. In this study, thin films of LiF are deposited using atomic layer deposition (ALD). Lithd and TiF₄ are used as precursors, and they produce crystalline LiF in the temperature range 250–350 °C. The films are studied with UV-Vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and elastic recoil detection analysis (ERDA). Adhesion of the films is tested by a Scotch tape test. This ALD process results in LiF films with a growth rate of approximately 1 Å per cycle at 325 °C. According to ERDA measurements, the films are pure LiF with only small O, C, and H impurities.

Atmospheric-pressure plasma atomic layer deposition (APP-ALD) of TiO_x at room temperature is reported for the first time. Layer properties of the APP-ALD-grown TiO_x are compared to those reported for the low-pressure plasma ALD of TiO_x. The contribution of parasitic CVD to the process is discussed. The application of the resulting TiO_x layers as electron-extraction interlayers in inverted organic solar cells (OSCs) is demonstrated. The characteristics of OSCs based on APP-ALD-grown TiO_x are similar to those of OSCs based on TiO_x prepared by low-pressure thermal ALD or sol-gel processing. APP-ALD is intended to harvest the beneficial properties of ALD layers in a high-throughput atmospheric processing environment.

In this study, we investigate 7-octenytrichlorosilane (7-OTS) multilayers and relevant organic-inorganic hybrid nano-laminates fabricated using ozone (O₃) based molecular-atomic layer deposition (MALD). Highly concentrated O₃ gas introduced into the MALD chamber converts alkene (CC) terminal groups of 7-OTS molecules into carboxylic (COOH) groups. Trimethyl-aluminum (TMA) is applied to form a linker to construct multilayers of the OTS molecules. Aluminum oxide (Al₂O₃) and zinc oxide (ZnO) are embedded between the organic layers to form an organic-inorganic hybrid nano-laminate structure. Fourier transform infrared spectroscopy (FTIR), water contact angle measurement, ellipsometry, and transmission electron microscopy (TEM) are used to elucidate the growth mechanism.

Organic thin films are deposited using a novel layer-by-layer deposition approach named molecular-atomic-layer-deposition (MALD). Organic molecules are introduced into the reaction chamber in the vapor phase to construct the backbone of polymeric thin films on the substrate with the help of ALD linker and ozone gas. MALD of organic-inorganic nano-laminates can also be achieved by alternating inorganic ALD and organic MLD layers, as illustrated in the cross-sectional TEM.

Nanocomposite tungsten-aluminum oxide (W:Al₂O₃) thin films were prepared by atomic layer deposition (ALD) using tungsten hexafluoride (WF₆) and disilane (Si₂H₆) for the W ALD and trimethyl aluminum (TMA) and H₂O for the Al₂O₃ ALD. Quartz crystal microbalance (QCM) measurements performed using various W cycle percentages revealed that the W ALD inhibits the Al₂O₃ ALD and vice versa. Despite this inhibition, the relationship between W content and W cycle percentage was close to that predicted by theoretical calculations based on the growth per cycle values of binary compounds. Depth profiling XPS showed that the (W:Al₂O₃) films were uniform in composition and contained Al, O, and metallic W as expected, but also included significant F and C. Cross-sectional TEM revealed the composite film structure to be metallic nanoparticles (∼1 nm) embedded in an amorphous matrix. The resistivity of these composite films could be tuned in the range of 10¹²–10⁸ Ω cm by adjusting the W cycle percentage between 10% and 30%W. These films have applications in electron multipliers as well as electron and ion optics.

Nanocomposite W:Al₂O₃ films are prepared by atomic layer deposition (ALD) using tungsten hexafluoride (WF₆) and disilane (Si₂H₆) for the W ALD and trimethyl aluminum (TMA) and H₂O for the Al₂O₃ ALD. Cross-sectional TEM reveals the film structure to be metallic nanoparticles (∼1 nm) embedded in an amorphous matrix. The resistivity of these films can be tuned over 10¹²–10⁸ Ω cm by adjusting the W cycle percentage between 10 and 30% W.

Superparamagnetic nanocomposites of carbon-coated cobalt (Co@C) nanoparticles are synthesized through CVD by the use of cobaltocene and an additional hydrocarbon as the precursor. The nanocomposite is characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy (RS), and superconducting quantum interference device (SQUID) magnetometry. The cobalt nanoparticles exhibit face-centered cubic (fcc) structure and an average size of about 4 nm within a narrow size distribution of 3–5 nm. They are tightly embedded in the carbon matrix in core/shell structures and well protected against oxidation. Magnetic results reveal superparamagnetic behavior with blocking temperature T_B ∼ 140 K and a room temperature saturation magnetization of 79 emu g⁻¹. We evaluate synthesis parameters such as decomposition temperature, pressure, and ratio of cobalt to carbon in the gaseous precursor and show that they strongly affect the characteristics of the C matrix, the size of cobalt particles, and thus the magnetic properties of the nanocomposite.

A physically based model of atomic layer deposition (ALD) surface reaction dynamics is developed and applied to alumina ALD with water and trimethylaluminum precursors. The time-dependent growth surface composition is modeled by computing the equilibrium precursor adduct surface concentrations during each half-reaction and the rate constants of the ligand exchange reactions using transition state theory. To describe the continuous cyclic operation of the deposition reaction system, a numerical procedure to discretize limit-cycle solutions is developed and used to distinguish saturating growth per cycle (GPC) from non-saturating (gpc) conditions. The transition between the two regimes is studied as a function of precursor partial pressure, exposure time, and temperature.

Ultrasonic spray pyrolysis is used to produce metal oxide powders (alumina, yttria, and mixtures of these) from nitrate precursors at temperatures below 500 °C. Moreover, yttria powder coatings on soda-lime glass and fused silica substrates are generated. The as-prepared powders and coatings are examined using scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD), and transmission electron microscopy (TEM).

Ultrasonic spray pyrolysis is used to produce metal oxide powders (alumina, yttria, and mixtures of these) from nitrate precursors at temperatures below 500 °C. Moreover, yttria powder coatings on soda lime glass and fused silica substrates are generated. The as-prepared powders and coatings are examined by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD), and transmission electron microscopy (TEM).

The complex, Mn(hfa)₂•tmeda [(H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentandione, tmeda = N,N,N′,N′-tetramethylethylendiamine)], is synthesized in a single-step reaction and characterized by elemental analysis, thermal analysis, and infrared (IR) spectroscopy. The solid-state crystal structure of Mn(hfa)₂•tmeda provides evidence of a mononuclear structure. The thermal analyses show that the complex is thermally stable and can be evaporated to leave less than 2% residue. The complex properties are compared with the first generation, commercially available Mn^II and Mn^III precursors, Mn(acac)₂ (Hacac = acetylacetone) and Mn(tmhd)₃ (Htmhd = 2,2,6,6-tetramethyl-3,5-heptanedione), respectively. Mn(hfa)₂•tmeda represents the first example of manganese(II) precursor that can be used in the liquid phase without decomposition, thus providing constant evaporation rates, even for long deposition times. It is successfully applied to the reduced-pressure, metal-organic (MO)CVD of the Mn₃O₄ phase.

A non-hygroscopic, thermally stable, and volatile Mn^II complex is synthesized through coordination of the Lewis base tmeda to the Mn(hfa)₂ moiety. Mn(hfa)₂•tmeda represents the first example of a manganese(II) precursor that can be used in the liquid phase without decomposition, thus providing constant evaporation rates even for long deposition times. Its application to MOCVD produces hausmannite Mn₃O₄ phase films with a highly structured surface.

Microwave plasma (MW)CVD is used for the first time in the low-temperature, hetero-epitaxial growth of 3C-SiC films on Si using a gas mixture of tetramethylsilane (TMS) and hydrogen. Good epitaxial matching between the 3C-SiC film and Si substrate is obtained in the epitaxially grown 3C-SiC films. Further investigation reveals that microwave powder density and substrate temperature play an important role in the determination of the orientation, SiC/Si interface structure, and morphology of 3C-SiC films. The presented results show MWCVD might be a potent approach in the future in obtaining large-scale, high-quality, single-crystalline 3C-SiC films.

Two new liquid dimethylgold(III) complexes (with substituted dithiophosphinate) of the general formula Me₂AuS₂PX₂ (in 1, X = OMe and in 2, X = OEt), as well as their synthesis and thermal behavior, are reported. The compounds are stable under storage, do not require special handling conditions, and they exhibit a good volatility and vaporization stability. The decomposition of the vapor of these compounds on the surface is observed to begin at T = 433 K (160°C) for 1 and 423 K (150°C) for 2. The decomposition pathways to elemental gold are established, based on the temperature dependences of the gas-phase composition. The formation of gold films using metal-organic (MO)CVD within the temperature range 483 − 523 K (210 − 250°C) is confirmed by means of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis.

N-doped titanium dioxide (TiO₂) thin films are grown on Si(100) and indium tin oxide (ITO)-coated borosilicate glass substrates by metal-organic (MO)CVD. The intrinsic doping of TiO₂ thin films is achieved using all-nitrogen-coordinated Ti precursors in the presence of oxygen. The titanium amide-guanidinate complex, [Ti(NMe₂)₃(guan)] (guan = N,N′-diisopropyl-2-dimethylamidoguanidinato) has been developed to compensate for the thermal instability of the parent alkylamide [Ti(NMe₂)₄]. Both of these amide-based compounds are tested and compared as precursors for intrinsically N-doped TiO₂ at various deposition temperatures in the absence of additional N sources. The structure and morphology of TiO₂ thin films are characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). Rutherford back scattering (RBS), nuclear reaction analysis (NRA), and secondary ion mass spectrometry (SIMS) analyses are performed to determine N content and distribution in the films. The optical and photoelectrochemical properties of TiO₂ thin films on ITO substrates are also examined. N-doped TiO₂ thin films, grown from [Ti(NMe₂)₃(guan)] at 600 °C, exhibit the lowest optical absorption edge (3.0 eV) and the highest visible light photocurrent response. When compared to undoped TiO₂, while in UV light photoconversion efficiency decreases significantly, the intrinsically N-doped TiO₂ shows enhanced photocurrents under visible light irradiation.

The intrinsic doping of TiO₂ thin films with nitrogen by MOCVD and the investigation of the photo-electrochemical properties of the films are reported. N-doped anatase phase TiO₂ thin films are grown on Si(100) and ITO substrates under specific processing conditions, using [Ti(NMe₂)₄] (1) and [Ti(NMe₂)₃(guan)] (2) (guan = N,N′-diisopropyl-2-dimethylamidoguanidinato) as precursors. The films grown from [Ti(NMe₂)₃(guan)] at 600 °C show relatively large surface roughness and lower bandgap related with high N content.

The effects of reaction temperature, methane partial pressure, and reaction period on growing single-walled carbon nanotubes (SWCNTs) are demonstrated in the present study. Simple methane CVD is carried out using a homemade iron nanoparticles catalyst. The iron nanoparticles are prepared by spin-coating a colloidal mixture of iron(III) nitrate, PEG-400, and absolute ethanol on silicon wafers. The experimental results show that the effects of all three reaction parameters studied, on the morphology and the topography of the SWCNT arrays, are significant. There is no evidence showing that the diameter of SWCNTs is correlated with these three reaction parameters.

CNTs are grown on iron nanoparticles prepared by spin-coating a colloidal mixture using CVD. The density and morphology of CNT arrays depend on the reaction temperature, reaction period, and partial pressure of methane. The diameters of the CNTs are independent of these parameters.

Metal-organic (MO)CVD of bismuth telluride thin films is investigated by using a combination of optimized bismuth and tellurium precursors along with H₂ as a reactant gas. Good quality films are obtained, even at 300 °C. The Bi precursors are trimethyl bismuth (Bi(CH₃)₃, Bi(Me₃)) and triethyl bismuth (Bi(C₂H₅)₃, Bi(Et)₃), and the Te precursors are diethyl tellurium (Te(C₂H₅)₂, Te(Et)₂), di-isopropyl tellurium (Te(C₃H₇)₂, Te(ⁱPr)₂), and di-tertiarybutyl tellurium (Te(C₄H₉)₂, Te(^tBu)₂). The integrated absorbance area of C-H stretching vibrations in the range 2800–3200 cm⁻¹ is estimated to determine the decomposition rate of the Bi and Te precursors. C-oriented Bi₂Te₃ films are obtained at 300 °C and under 2.5 Torr using Bi(Et)₃ and Te(^tBu)₂ and characterized. Further, the microstructure, crystallinity, and surface morphology of the films are determined. The appropriate stoichiometry of the bismuth telluride films is obtained as Bi/Te = 2:3. The combination of Bi(Et)₃ and Te(^tBu)₂ is the most effective for low-temperature deposition because, compared to the other precursors, the decomposition of these precursors starts at a lower temperature. Investigations of the precursor decomposition behavior show that the absorbance of C-H stretching vibrations of ligands in precursors in the gas phase is sensitive to the analysis conditions.

Bi₂Te₃ films can be deposited on a silicon dioxide substrate at temperatures as low as 300 °C using candidate precursors, Bi(Et)₃ and Te(^tBu)₂, with relatively low decomposition temperatures for use in MOCVD. From the HRTEM image, quintuple layers with thickness of ≈1 nm are observed in the Bi₂Te₃ plate and atomic-scale steps appear at the surface.

MnSi nanoparticles on silica are prepared by metal-organic (MO)CVD of Mn(CO)₅SiCl₃ as a single-source precursor. Mn(CO)₅SiCl₃ is synthesized from Mn₂(CO)₁₀ and SiHCl₃ using standard Schlenk techniques, and confirmed by Fourier transform infrared (FTIR), single-crystal X-ray diffraction (XRD), and ¹³C and ²⁹Si nuclear magnetic resonance (NMR). Powder XRD patterns, high resolution transmission electron microscopy (HRTEM), elemental maps, and energy dispersive X-ray (EDX) spectroscopy show that MnSi particles, with a size of about 5–6 nm, are uniformly dispersed on the silica support. The formation mechanism of MnSi nanoparticles on silica is investigated by in-situ FTIR spectroscopy. The results demonstrate the formation details of MnSi nanoparticles from Mn(CO)₅SiCl₃ through the elimination of carbonyl groups and dissociation of SiCl bonds with the promotion of H₂.

Uniformly dispersed MnSi nanoparticles on silica with a size of about 5–6 nm are synthesized by MOCVD of Mn(CO)₅SiCl₃ as a single-source precursor. The formation mechanism of MnSi from Mn(CO)₅SiCl₃ adsorbed on silica in H₂ through elimination of carbonyl groups and dissociation of SiCl bonds is proven using in-situ FTIR spectroscopy.