Original Paper
Crack‐Free InGaN/GaN Light Emitters on Si(111)
First published: 22 November 2001
Citations: 36
Abstract
We present MOCVD‐grown crack‐free GaN based light emitters on Si with a layer thickness of 3.6 μm. The crack free layer is grown on a thin predeposited GaN layer with fields defined by a SixNy mask. In X‐ray diffraction measurements a reduction in stress is observed for the patterned sample as compared to a similar unstructured sample. Lateral growth occurs at the edges of the fields with strongly differing growth rates for perpendicular directions. The impact of the facet type on the growth rate and impurity incorporation is observed by scanning electron microscopy and cathodoluminescence measurements. In electroluminescence the diode shows a bright blue emission at 421 nm.
Citing Literature
Number of times cited according to CrossRef: 36
- Khaled H. Khafagy, Tarek M. Hatem, Salah M. Bedair, Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities, MRS Advances, 10.1557/adv.2019.49, 4, 13, (755-760), (2019).
- Matthew H. Kane, Nazmul Arefin, Gallium nitride (GaN) on silicon substrates for LEDs, Nitride Semiconductor Light-Emitting Diodes (LEDs), 10.1016/B978-0-08-101942-9.00004-6, (79-121), (2018).
- Armin Dadgar, Alois Krost, LED Materials: GaN on Si, Handbook of Advanced Lighting Technology, 10.1007/978-3-319-00176-0, (123-147), (2017).
- Takashi Egawa, Osamu Oda, LEDs Based on Heteroepitaxial GaN on Si Substrates, III-Nitride Based Light Emitting Diodes and Applications, 10.1007/978-981-10-3755-9_3, (29-67), (2017).
- Marzieh Khademalrasool, Mansoor Farbod, Mohammad Davoud Talebzadeh, The improvement of photocatalytic processes: Design of a photoreactor using high-power LEDs, Journal of Science: Advanced Materials and Devices, 10.1016/j.jsamd.2016.06.012, 1, 3, (382-387), (2016).
- G.F. Yang, Q. Zhang, J. Wang, Y.N. Lu, P. Chen, Z.L. Wu, S.M. Gao, G.Q. Chen, InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes, Reviews in Physics, 10.1016/j.revip.2016.06.001, 1, (101-119), (2016).
- Armin Dadgar, Sixteen years GaN on Si, physica status solidi (b), 10.1002/pssb.201451656, 252, 5, (1063-1068), (2015).
- Kerstin Volz, Wolfgang Stolz, Armin Dadgar, Alois Krost, Growth of III/Vs on Silicon, Handbook of Crystal Growth, 10.1016/B978-0-444-63304-0.00031-7, (1249-1300), (2015).
- Baijun Zhang, Yang Liu, A review of GaN-based optoelectronic devices on silicon substrate, Chinese Science Bulletin, 10.1007/s11434-014-0169-x, 59, 12, (1251-1275), (2014).
- M.H. Kane, N. Arefin, Gallium nitride (GaN) on silicon substrates for LEDs, Nitride Semiconductor Light-Emitting Diodes (LEDs), 10.1533/9780857099303.1.99, (99-143), (2014).
- Armin Dadgar, Alois Krost, LED Materials: GaN on Si, Handbook of Advanced Lighting Technology, 10.1007/978-3-319-00295-8, (1-21), (2014).
- Peng Xiang, Minggang Liu, Yibin Yang, Weijie Chen, Zhiyuan He, Ka Kuen Leung, Charles Surya, Xiaobiao Han, Zhisheng Wu, Yang Liu, Baijun Zhang, Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer, Japanese Journal of Applied Physics, 10.7567/JJAP.52.08JB18, 52, 8S, (08JB18), (2013).
- Junlin Liu, Jianli zhang, Qinghua Mao, Xiaoming Wu, Fengyi Jiang, Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate, CrystEngComm, 10.1039/c3ce27059a, 15, 17, (3372), (2013).
- Takashi Egawa, Osamu Oda, Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates, III-Nitride Based Light Emitting Diodes and Applications, 10.1007/978-94-007-5863-6_3, (27-58), (2013).
- Jin Shun Yue, Ying Gao, Guo Hua Zhang, Yi Liu, Light Power Enhancement of Violet LEDs Using AlGaN-Based Epitaxial Structure, Applied Mechanics and Materials, 10.4028/www.scientific.net/AMM.331.572, 331, (572-577), (2013).
- Chang Da Zheng, Chun Lan Mo, Wen Qing Fang, Feng Yi Jiang, Effect of the Conduction Type of Si (111) Substrates on the Performance of GaN MQW LED Epitaxial Films, Advanced Materials Research, 10.4028/www.scientific.net/AMR.750-752.1029, 750-752, (1029-1033), (2013).
- Hadis Morkoç, Growth and Growth Methods for Nitride Semiconductors, Handbook of Nitride Semiconductors and Devices, 10.1002/9783527628438, (323-816), (2009).
- X. Ni, R. Shimada, T. D. Kang, J. H. Leach, Ü. Özgür, H. Morkoç, GaN‐based vertical cavities with crack‐free high‐reflectivity patterned AlGaN/GaN distributed Bragg reflectors, physica status solidi (a), 10.1002/pssa.200824377, 206, 2, (367-370), (2008).
- Benjamin Damilano, Franck Natali, Julien Brault, Thomas Huault, Denis Lefebvre, Rabih Tauk, Eric Frayssinet, Jean-Christophe Moreno, Yvon Cordier, Fabrice Semond, Sébastien Chenot, Jean Massies, Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate, Applied Physics Express, 10.1143/APEX.1.121101, 1, (121101), (2008).
- A. Dadgar, P. Veit, F. Schulze, J. Bläsing, A. Krtschil, H. Witte, A. Diez, T. Hempel, J. Christen, R. Clos, A. Krost, MOVPE growth of GaN on Si – Substrates and strain, Thin Solid Films, 10.1016/j.tsf.2006.07.100, 515, 10, (4356-4361), (2007).
- W. Gehlhoff, D. Azamat, A. Hoffmann, Site selectivity of Fe3+Ga and the formation of Fe3+Ga–Gai pairs in GaN, physica status solidi (b), 10.1002/pssb.200565466, 243, 7, (1687-1691), (2006).
- A. Krtschil, D.C. Look, Z.-Q. Fang, A. Dadgar, A. Diez, A. Krost, Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation, Physica B: Condensed Matter, 10.1016/j.physb.2005.12.176, 376-377, (703-706), (2006).
- Jiejun Wu, Xiuxun Han, Jiemin Li, Hongyuan Wei, Guangwei Cong, Xianglin Liu, Qinsheng Zhu, Zhanguo Wang, Quanjie Jia, Liping Guo, Tiandou Hu, Huanhua Wang, Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition, Optical Materials, 10.1016/j.optmat.2005.08.004, 28, 10, (1227-1231), (2006).
- L.S. Wang, S. Tripathy, B.Z. Wang, S.J. Chua, GaN epilayers on nanopatterned GaN/Si(111) templates: Structural and optical characterization, Applied Surface Science, 10.1016/j.apsusc.2006.05.107, 253, 1, (214-218), (2006).
- A. Dadgar, C. Hums, A. Diez, J. Bläsing, A. Krost, Growth of blue GaN LED structures on 150-mm Si(111), Journal of Crystal Growth, 10.1016/j.jcrysgro.2006.09.032, 297, 2, (279-282), (2006).
- W. Gehlhoff, D. Azamat, U. Haboeck, A. Hoffmann, Preferential substitution of Fe on physically equivalent Ga sites in GaN, Physica B: Condensed Matter, 10.1016/j.physb.2005.12.124, 376-377, (486-490), (2006).
- F. Schulze, A. Dadgar, J. Bläsing, A. Krost, GaN heteroepitaxy on Si(001), Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.08.065, 272, 1-4, (496-499), (2004).
- A. Dadgar, M. Poschenrieder, J. Bläsing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, M. Kamp, J. Christen, F.A. Ponce, E. Kohn, A. Krost, MOVPE growth of GaN on Si(111) substrates, Journal of Crystal Growth, 10.1016/S0022-0248(02)01894-8, 248, (556-562), (2003).
- Armin Dadgar, GaN‐On‐Si Epitaxy, digital Encyclopedia of Applied Physics, 10.1002/3527600434, (1-13), (2003).
- A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, A. Krost, Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon, physica status solidi (c), 10.1002/pssc.200303122, 0, 6, (1583-1606), (2003).
- A. Dadgar, M. Poschenrieder, I. Daumiller, M. Kunze, A. Strittmatter, T. Riemann, F. Bertram, J. Bläsing, F. Schulze, A. Reiher, A. Krtschil, O. Contreras, A. Kaluza, A. Modlich, M. Kamp, L. Reißmann, A. Diez, J. Christen, F.A. Ponce, D. Bimberg, E. Kohn, A. Krost, Gallium‐nitride‐based devices on silicon, physica status solidi (c), 10.1002/pssc.200303123, 0, 6, (1940-1949), (2003).
- J. Christen, T. Riemann, F. Bertram, D. Rudloff, P. Fischer, A. Kaschner, U. Haboeck, A. Hoffmann, C. Thomsen, Optical micro‐characterization of group‐III‐nitrides: correlation of structural, electronic and optical properties, physica status solidi (c), 10.1002/pssc.200303125, 0, 6, (1795-1815), (2003).
- A. Dadgar, M. Poschenrieder, O. Contreras, J. Christen, K. Fehse, J. Bläsing, A. Diez, F. Schulze, T. Riemann, F.A. Ponce, A. Krost, Bright, Crack‐Free InGaN/GaN Light Emitters on Si(111), physica status solidi (a), 10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M, 192, 2, (308-313), (2002).
- A. Krost, A. Dadgar, GaN‐Based Devices on Si, physica status solidi (a), 10.1002/1521-396X(200212)194:2<361::AID-PSSA361>3.0.CO;2-R, 194, 2, (361-375), (2002).
- S. Zamir, B. Meyler, J. Salzman, Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy, Journal of Crystal Growth, 10.1016/S0022-0248(02)01578-6, 243, 3-4, (375-380), (2002).
- A. Krost, A. Dadgar, Blue Optoelectronics in III-V Nitrides on Silicon, Acta Physica Polonica A, 10.12693/APhysPolA.102.555, 102, 4-5, (555-566), (2002).
